SMBJ100CA-TR STMicroelectronics, SMBJ100CA-TR Datasheet - Page 4
![DIODE, TVS, 100V, 600W](/photos/21/97/219718/ge2smb05-40_sml.jpg)
SMBJ100CA-TR
Manufacturer Part Number
SMBJ100CA-TR
Description
DIODE, TVS, 100V, 600W
Manufacturer
STMicroelectronics
Datasheet
1.SMBJ100CA-TR.pdf
(6 pages)
Specifications of SMBJ100CA-TR
Reverse Stand-off Voltage Vrwm
100V
Breakdown Voltage Range
117V
Clamping Voltage Vc Max
162V
Diode Configuration
Bidirectional
Peak Pulse Current Ippm
19A
Diode Case Style
SMB
No. Of Pins
2
Svhc
No
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SMBJ100CA-TR
Manufacturer:
STMicroe
Quantity:
88 000
SMBJxxxA-TR, CA-TR
Note : The curves of the figure 3 are specified for a junction temperature of 25 C before surge.
The given results may be extrapolated for other junction temperatures by using the following formula :
For intermediate voltages, extrapolate the given results.
Fig. 4a : Capacitance versus reverse applied
voltage for unidirectional types (typical values).
4/6
10000
1000
V
100
BR
10
1
= T
C (pF)
S M B J
S M B J
S M B J
S M B J
S M B J
Fig. 3 :
*
1 8 8 A
1 3 A
2 6 A
5 8 A
5 .0 A
[T
amb
-25]
Clamping voltage versus peak pulse current.
Exponential waveform t
SMBJ188A
SMBJ130A
SMBJ58A
SMBJ33A
SMBJ18A
SMBJ8.5A
SMBJ5.0A
10
*
V
BR
(25°C)
100
F= 1 MHz
Tj = 25°C
V
R
(V)
t
t
p
p
p
= 20 s
= 1 ms
= 10 ms ...............
500
Fig. 4b : Capacitance versus reverse applied
voltage for bidirectional types (typical values).
10000
________
——————-
1000
100
10
1
C (pF)
S M B J
S M B J
S M B J
S M B J
S M B J 5 .0 A
1 3 A
2 6 A
1 8 8 A
5 8 A
10
100
Tj = 25°C
F= 1 MHz
V
R
(V)
500