DSEP29-12A IXYS SEMICONDUCTOR, DSEP29-12A Datasheet

DIODE, FAST, 30A, TO-220AC

DSEP29-12A

Manufacturer Part Number
DSEP29-12A
Description
DIODE, FAST, 30A, TO-220AC
Manufacturer
IXYS SEMICONDUCTOR
Datasheet

Specifications of DSEP29-12A

Repetitive Reverse Voltage Vrrm Max
1.2kV
Forward Current If(av)
30A
Forward Voltage Vf Max
1.81V
Reverse Recovery Time Trr Max
40ns
Forward Surge Current Ifsm Max
200A
Diode Type
Fast Recovery
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DSEP29-12A
Manufacturer:
RENESAS
Quantity:
10 000
Company:
Part Number:
DSEP29-12A
Quantity:
1 078
HiPerFRED
with soft recovery
1200
Symbol
I
I
I
E
I
T
T
T
P
M
Weight
Symbol
I
V
R
R
t
I
Pulse test:
Data according to IEC 60747 and per diode unless otherwise specified.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
V
FRMS
FAVM
FSM
AR
R
RM
rr
VJ
VJM
stg
AS
tot
F
thJC
thCH
RSM
V
d
1200
V
Pulse Width =
Pulse Width = 300 µs, Duty Cycle < 2.0%
RRM
V
Conditions
T
T
T
I
V
T
mounting torque
typical
Conditions
V
I
I
V
V
T
AS
F
F
C
VJ
VJ
C
VJ
A
R
R
R
= 30 A;
= 1 A; -di/dt = 200 A/µs;
= 115°C; rectangular, d = 0.5
= 11.5 A; L = 180 µH
= 1.25·V
= 25°C
= V
= 30 V; T
= 100 V; I
= 45°C; t
= 25°C; non-repetitive
= 100°C
RRM
;
TM
Type
DSEP 29-12A
R
p
VJ
typ.; f = 10 kHz; repetitive
T
T
T
T
5 ms, Duty Cycle < 2.0%
F
= 10 ms (50 Hz), sine
VJ
VJ
VJ
VJ
= 25°C
= 50 A; -di
Epitaxial Diode
= 25°C
= 150°C
= 150°C
= 25°C
F
/dt = 100 A/µs
typ.
Characteristic Values
0.5
40
8.5
-55...+175
-55...+150
Maximum Ratings
0.4...0.6
A
max.
1.81
2.75
11.4
200
175
165
250
1.2
0.9
35
30
14
2
1
K/W
K/W
Nm
mA
mJ
µA
°C
°C
°C
ns
W
C
A
A
A
A
V
V
A
g
I
V
t
TO-220 AC
A = Anode, C = Cathode, TAB = Cathode
Features
• International standard package
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low I
• Soft recovery behaviour
• Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
• Rectifiers in switch mode power
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
• Soft reverse recovery for low EMI/RFI
• Low I
FAV
rr
switching devices
and motor control circuits
supplies (SMPS)
operation
- Power dissipation within the diode
- Turn-on loss in the commutating switch
RRM
RM
RM
C
=
= 1200 V
=
-values
A
reduces:
DSEP 29-12A
30 A
40 ns
C (TAB)
20091012a
1 - 3

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DSEP29-12A Summary of contents

Page 1

TM HiPerFRED Epitaxial Diode with soft recovery V V Type RSM RRM V V 1200 1200 DSEP 29-12A Symbol Conditions I FRMS 115°C; rectangular 0.5 FAVM 45° ...

Page 2

IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved DSEP 29-12A 20091012a ...

Page 3

T = 150° 100°C 25° [V] F Fig. 1 Forward current I vs 2.0 1 ...

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