MWI450-12E9 IXYS, MWI450-12E9 Datasheet

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MWI450-12E9

Manufacturer Part Number
MWI450-12E9
Description
Discrete Semiconductor Modules 450 Amps 1200V
Manufacturer
IXYS
Type
Six-Pack IGBT Modulesr
Datasheet
1.MWI450-12E9.pdf (5 pages)

Specifications of MWI450-12E9

Product
Power Semiconductor Modules
Mounting Style
Screw
Package / Case
E+
Channel Type
N
Configuration
Hex
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
640
Ic80, Tc = 80°c, Igbt, (a)
440
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
2.2
Eoff, Typ, Tj = 125°c, Igbt, (mj)
47
Rthjc, Max, Igbt, (k/w)
0.057
If25, Tc = 25°c, Diode, (a)
-
If80, Tc = 80°c, Diode, (a)
450
Package Style
E+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MWI450-12E9
Manufacturer:
IXYS
Quantity:
1 000
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
MWI450-12E9
Quantity:
60
IGBT Modules
Sixpack
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
IGBTs
Symbol
V
V
I
I
RBSOA
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
CES
GES
C25
C80
SC
d(on)
r
d(off)
f
GE(th)
GES
CE(sat)
on
off
CES
tot
ies
thJC
Gon
Conditions
T
T
T
R
Clamped inductive load; L = 100 µH
V
T
T
Conditions
I
I
V
V
Inductive load, T
V
V
V
V
C
C
VJ
C
C
VJ
C
CE
CE
CE
GE
CE
CE
CE
G
= 450 A; V
= 18 mA; V
= 25°C
= 80°C
= 25°C
= 2.7 Ω; T
= 25°C to 125°C
= 125°C; non-repetitive; V
= V
= 600 V; V
= 900 V; V
= 0 V; V
= 600 V; I
= ± 15 V; R
= 25 V; V
CES
; V
GE
GE
GE
GE
VJ
GE
C
GE
GE
= ± 20 V
G
= 0 V
= 450 A
= 15 V
= 125°C
= 0 V; f = 1 MHz
= V
= 2.7 Ω
= ± 15 V; R
VJ
= 15 V; I
= 125°C
CE
C
= 450 A
G
T
T
T
T
29
28
VJ
VJ
VJ
VJ
= 2.7 Ω
CEmax
(T
= 25°C
= 125°C
= 25°C
= 125°C
VJ
15
16
17
13
14
< V
= 25°C, unless otherwise specified)
CES
2
1
11/12
min.
4.5
20
21
22
18
19
Characteristic Values
Maximum Ratings
typ.
190
116
475
100
2.2
2.5
3.3
V
35
47
33
I
CEK
3
6
4
CM
9/10
= 900
< V
0.057
1200
max.
± 20
25
26
27
23
24
640
440
600
2.2
2.4
6.5
CES
21
10
1
K/W
5
6
mA
mA
kW
mJ
mJ
µC
nA
nF
7/8
µs
ns
ns
ns
ns
V
V
A
A
A
V
V
V
I
V
V
See outline drawing for pin arrangement
Features
• NPT
• low saturation voltage
• low switching losses
• square RBSOA, no latch up
• high short circuit capability
• positive temperature coefficient for
• MOS input, voltage controlled
• ultra fast free wheeling diodes
• solderable pins for PCB mounting
• package with copper base plate
Advantages
• space savings
• reduced protection circuits
• package designed for wave soldering
Typical Applications
• AC motor control
• AC servo and robot drives
• power supplies
C80
easy parallelling
CES
CE(sat) typ.
3
IGBT technology
MWI 450-12 E9
= 440 A
= 1200 V
=
2.2 V
20100401a
E72873
1 - 5

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MWI450-12E9 Summary of contents

Page 1

... VJ d(off 600 450 ± 2.7 Ω off MHz ies 600 Gon thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 11/12 9/ Maximum Ratings 1200 ± 20 640 440 I = 900 CM V < V CEK = 2.7 Ω ...

Page 2

... Weight * ) ·I resp CEsat therm-chip C F IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved Maximum Ratings 450 900 = 0 V 35000 R Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. ...

Page 3

... Dimensions 0.0394" 2.884·10 1.523·10 7.617·10 0.03 0.036 IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved = tolerance for all dimensions: Diode IGBT τ 1·10 2.344· 5·10 5.97· 0.012 5.97·10 ...

Page 4

... V = 600 100 -10 - [µ Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 800 600 400 9 V 200 4 6 800 600 400 200 10 12 400 300 200 100 3 MWI 450- 125° ...

Page 5

... Fig. 10 Typ. turn off energy and switching times versus gate resistor single pulse 1 10 100 1000 [ms] t Fig. 12 Typ. transient thermal impedance 600 500 400 t d(off) 300 200 100 800 2500 t d(off) 2000 1500 1000 500 diode IGBT MWI450-12E9 10000 20100401a ...

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