MWI225-12E9 IXYS, MWI225-12E9 Datasheet

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MWI225-12E9

Manufacturer Part Number
MWI225-12E9
Description
Discrete Semiconductor Modules 225 Amps 1200V
Manufacturer
IXYS
Type
Six-Pack IGBT Modulesr
Datasheet
1.MWI225-12E9.pdf (5 pages)

Specifications of MWI225-12E9

Channel Type
N
Configuration
Hex
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Product
Power Semiconductor Modules
Mounting Style
Screw
Package / Case
E+
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
355
Ic80, Tc = 80°c, Igbt, (a)
250
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
2.1
Eoff, Typ, Tj = 125°c, Igbt, (mj)
21
Rthjc, Max, Igbt, (k/w)
0.09
If25, Tc = 25°c, Diode, (a)
-
If80, Tc = 80°c, Diode, (a)
205
Package Style
E+
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MWI225-12E9
Manufacturer:
IXYS
Quantity:
1 000
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
MWI225-12E9
Quantity:
60
IGBT Modules
Sixpack
NPT
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
IGBTs
Symbol
V
V
I
I
RBSOA
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
CES
GES
C25
C80
SC
d(on)
r
d(off)
f
GE(th)
GES
CE(sat)
on
off
CES
tot
ies
thJC
Gon
3
IGBT
Conditions
T
T
T
R
Clamped inductive load; L = 100 µH
V
T
T
Conditions
I
I
V
V
Inductive load, T
V
V
V
V
C
C
VJ
C
C
VJ
C
CE
CE
CE
GE
CE
CE
CE
G
= 225 A; V
= 8 mA; V
= 25°C
= 80°C
= 25°C
= 5 Ω; T
= 25°C to 125°C
= 125°C; non-repetitive; V
= V
= 600 V; V
= 900 V; V
= 0 V; V
= 600 V; I
= ± 15 V; R
= 25 V; V
CES
; V
VJ
GE
GE
GE
GE
GE
C
= 125°C
GE
GE
= ± 20 V
= V
G
= 0 V
= 200 A
= 15 V
= 0 V; f = 1 MHz
= 3.6 Ω
= ± 15 V; R
VJ
= 15 V; I
CE
= 125°C
C
= 300 A
G
T
T
T
T
29
28
VJ
VJ
VJ
VJ
= 5 Ω
CEmax
(T
= 25°C
= 125°C
= 25°C
= 125°C
VJ
15
16
17
13
14
< V
= 25°C, unless otherwise specified)
CES
2
1
11/12
min.
4.5
20
21
22
18
19
Characteristic Values
Maximum Ratings
typ.
180
100
650
120
2.1
2.4
1.5
V
13
21
14
I
CEK
3
1
4
CM
9/10
= 500
< V
1200
max.
0.09
± 20
25
26
27
23
24
355
250
400
1.4
2.5
2.9
6.5
CES
10
1
8
K/W
5
6
mA
mA
kW
mJ
mJ
µC
nA
nF
7/8
µs
ns
ns
ns
ns
V
V
A
A
A
V
V
V
I
V
V
See outline drawing for pin arrangement
Features
• NPT
• low saturation voltage
• low switching losses
• square RBSOA, no latch up
• high short circuit capability
• positive temperature coefficient for
• MOS input, voltage controlled
• ultra fast free wheeling diodes
• solderable pins for PCB mounting
• package with copper base plate
Advantages
• space savings
• reduced protection circuits
• package designed for wave soldering
Typical Applications
• AC motor control
• AC servo and robot drives
• power supplies
C80
easy parallelling
CES
CE(sat) typ.
3
IGBT technology
MWI 225-12 E9
= 250 A
= 1200 V
=
2.1 V
20100421a
1 - 5

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MWI225-12E9 Summary of contents

Page 1

... VJ d(off 600 200 ± 3.6 Ω off MHz ies 600 Gon thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 11/12 9/ Maximum Ratings 1200 ± 20 355 250 I = 500 CM V < V CEK = 5 Ω ...

Page 2

... Weight * ) · resp CEsat therm-chip C F IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved Maximum Ratings 205 400 = 0 V 10000 R Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. ...

Page 3

... Dimensions 0.0394") IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved = tolerance for all dimensions: MWI 225-12 E9 20100421a ...

Page 4

... Fig. 3 Typ. output characteristics [V] -5 -10 -15 - [µC] G Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 400 300 I CE 200 [A] 100 Fig. 2 Typ. transfer characteristics 400 300 I C 200 9 V [A] 100 ...

Page 5

... E rec(off) 4 500 1000 1500 2000 di/dt [A/µs] Fig. 11 Typ. turn off energy and recovered charge of free wheeling diode IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 240 50 t d(on) 40 180 E off 30 t [mJ] ...

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