MWI225-17E9 IXYS, MWI225-17E9 Datasheet

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MWI225-17E9

Manufacturer Part Number
MWI225-17E9
Description
MOD IGBT SIXPACK E+
Manufacturer
IXYS
Datasheet

Specifications of MWI225-17E9

Configuration
Three Phase
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
2.9V @ 15V, 225A
Current - Collector (ic) (max)
335A
Current - Collector Cutoff (max)
600µA
Input Capacitance (cies) @ Vce
22nF @ 25V
Power - Max
1400W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
E+
Channel Type
N
Collector-emitter Voltage
1.7kV
Collector Current (dc) (max)
335A
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Vces, (v)
1700
Ic25, Tc = 25°c, Igbt, (a)
335
Ic80, Tc = 80°c, Igbt, (a)
235
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
2.5
Eoff, Typ, Tj = 125°c, Igbt, (mj)
54
Rthjc, Max, Igbt, (k/w)
0.085
If25, Tc = 25°c, Diode, (a)
-
If80, Tc = 80°c, Diode, (a)
200
Package Style
E+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IGBT Modules
Sixpack
NPT
Symbol
V
V
I
I
RBSOA
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
IGBTs
C25
C80
CES
GES
d(off)
SC
d(on)
r
f
GES
tot
CE(sat)
GE(th)
on
off
CES
ies
Gon
thJC
3
IGBT
Conditions
T
T
T
R
Clamped inductive load; L = 100 µH
V
T
T
Conditions
I
I
V
V
Inductive load, T
V
V
V
V
C
C
VJ
C
C
VJ
C
CE
CE
CE
CE
GE
CE
CE
G
= 225 A; V
= 20 mA; V
= 25°C
= 80°C
= 25°C
= 5 Ω; T
= 25°C to 125°C
= 1200 V; V
= 125°C; non-repetitive; V
= V
= 700 V; V
= 0 V; V
= 900 V; I
= 25 V; V
= ± 15 V; R
CES
; V
VJ
GE
GE
GE
GE
GE
C
= 125°C
GE
= ± 20 V
= 0 V; T
G
= 15 V; T
= 200 A
GE
= 0 V; f = 1 MHz
= V
= 5 Ω
VJ
= 15 V; I
= ± 15 V; R
CE
= 125°C
T
VJ
VJ
T
VJ
= 125°C
VJ
= 25°C
C
= 25°C
= 200 A
29
= 125°C
28
G
(T
Advanced Technical Information
CEmax
= 5 Ω;
VJ
16
17
13
15
14
= 25°C, unless otherwise specified)
< V
CES
2
1
11/12
min.
4.5
21
18
20
22
19
Characteristic Values
I
V
CM
CEK
Maximum Ratings
=
1.72
180
110
500
110
typ.
4
≤ V
2.5
2.9
4.4
3
66
54
22
1700
± 20
9/10
335
235
470
1.4
CES
10
26
27
23
0.085 K/W
25
24
max.
500
0.6 mA
2.9
3.4
6.5
6
5
kW
mA
µs
mJ
mJ
µC
nA
nF
ns
ns
ns
ns
7/8
V
V
A
A
A
V
V
V
I
V
V
See outline drawing for pin arrangement
Features
€ €
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Advantages
€ €
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Typical Applications
€ €
€ €
€ €
C80
NPT
low saturation voltage
low switching losses
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with copper base plate
space savings
reduced protection circuits
package designed for wave soldering
AC motor control
AC servo and robot drives
power supplies
CES
CE(sat) typ.
3
IGBT technology
MWI 225-17E9
= 235 A
= 1700 V
= 2.5 V
E72873
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MWI225-17E9 Summary of contents

Page 1

... off MHz ies 700 Gon thJC IXYS reserves the right to change limits, test conditions and dimensions. IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved Advanced Technical Information 11/12 9/ Maximum Ratings 1700 ± 20 ...

Page 2

... Creepage distance on surface S d Strike distance in air A R with heatsink compound thCH Weight * ) · I resp term-chip C CE(sat) © 2004 IXYS All rights reserved Advanced Technical Information Maximum Ratings 200 400 = 0 V 5800 R Characteristic Values min. typ. = 25°C VJ 160 0.165 Characteristic Values min. typ. ...

Page 3

... Dimensions 0.0394") © 2004 IXYS All rights reserved Advanced Technical Information = tolerance for all dimensions: MWI 225-17E9 ...

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