MII300-12E4 IXYS, MII300-12E4 Datasheet

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MII300-12E4

Manufacturer Part Number
MII300-12E4
Description
Discrete Semiconductor Modules 300 Amps 1200V
Manufacturer
IXYS
Datasheet

Specifications of MII300-12E4

Product
Power Semiconductor Modules
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
280
Ic80, Tc = 80°c, Igbt, (a)
200
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
2.2
Eoff, Typ, Tj = 125°c, Igbt, (mj)
20
Rthjc, Max, Igbt, (k/w)
0.11
If25, Tc = 25°c, Diode, (a)
300
If80, Tc = 80°c, Diode, (a)
190
Rthjc, Max, Diode, (k/w)
0.23
Package Style
Y3-Li
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IGBT Module
phaseleg
Preliminary data
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
IGBTs T1 - T2
Symbol
V
V
I
I
I
V
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
R
CES
GES
C25
C80
CM
SC
d(on)
r
d(off)
f
GE(th)
GES
CE(sat)
on
off
CES
CEK
tot
ies
thJC
thJH
Gon
Conditions
T
T
T
V
RBSOA Clamped inductive load; L = 00 µH
V
T
T
Conditions
I
I
V
V
Inductive load, T
V
V
V
V
(per IGBT)
with heatsink compound
C
C
VJ
C
C
GE
VJ
C
CE
CE
CE
GE
CE
CE
CE
= 200 A; V
= 6 mA; V
= 25°C
= 80°C
= 25°C
= 25°C to 25°C
= 25°C; non-repetitive
= V
= 600 V; V
= 900 V; V
= 0 V; V
= 600 V; I
= ± 5 V; R
= 25 V; V
= ± 5 V; R
CES
; V
GE
GE
GE
GE
GE
C
GE
GE
= ± 20 V
G
= V
G
= 0 V;
= 200 A
= 5 V;
= 0 V; f =  MHz
= 7.5 Ω; T
= 7.5 Ω
= ± 5 V; R
VJ
= 5 V; I
CE
= 25°C
C
VJ
= 200 A
G
T
T
T
T
= 25°C
VJ
VJ
VJ
VJ
= 7.5 Ω
(T
= 25°C
= 25°C
= 25°C
= 25°C
VJ
= 25°C, unless otherwise specified)
min.
4.5
Characteristic Values
Maximum Ratings
.6
0.22
typ.
70
680
2.2
2.6
5.5
0.8
3.5
60
50
29
20


0
8
9
200
00
max.
T2
T
± 20
0.
V
280
200
300
400
2.8
6.5
3.3
CES
0
D2
D
K/W
K/W
mA
mA
mJ
mJ
µC
nA
nF
µs
ns
ns
ns
ns
W
V
V
A
A
A
V
V
V
3

2
I
V
V
Features
• NPT
• HiPerFRED
• Package
Applications
• drives
• power supplies
C25
- low saturation voltage
- positive temperature coefficient
- fast switching
- short tail current for optimized
- fast and soft reverse recovery
- low operating forward voltage
- low leakage current
- low inductive current path
- screw connection to high current
- use of non interchangeable
- kelvin emitter terminal for easy drive
- isolated ceramic base plate
- AC
- DC
- rectifiers with power factor correction
- UPS
CES
CE(sat) typ.
performance in resonant circuits
main terminals
connectors for auxiliary terminals
possible
and recuperation capability
3
IGBT
MII 300-12 E4
TM
= 280 A
= 1200 V
=
diodes
2.2 V
 - 2

Related parts for MII300-12E4

MII300-12E4 Summary of contents

Page 1

... MHz ies 600 Gon (per IGBT) thJC R with heatsink compound thJH IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved Maximum Ratings 200 ± 20 280 200 = 25°C 300 7.5 Ω G 00 Characteristic Values (T = 25° ...

Page 2

... Mounting torque (module, M6) d (terminal, M6) Symbol Conditions d Creepage distance on surface S d Strike distance in air A Weight Dimensions 0.0394") IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved Maximum Ratings 300 90 Characteristic Values min. typ. max 25°C 2.3 2 25° ...

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