BAV99 /T3 NXP Semiconductors, BAV99 /T3 Datasheet - Page 3

SWITCHING DIODE, 100V 215mA, SOT-23

BAV99 /T3

Manufacturer Part Number
BAV99 /T3
Description
SWITCHING DIODE, 100V 215mA, SOT-23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAV99 /T3

Diode Type
Small Signal
Forward Current If(av)
215mA
Repetitive Reverse Voltage Vrrm Max
85V
Forward Voltage Vf Max
1.25V
Reverse Recovery Time Trr Max
4ns
Forward Surge Current Ifsm Max
4A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NXP Semiconductors
5. Limiting values
BAV99_SER
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
[5]
Symbol
Per diode
V
V
I
I
I
P
T
T
Per device
T
F
FRM
FSM
j
amb
stg
RRM
R
tot
Single diode loaded.
Double diode loaded.
T
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Soldering points at pins 2, 3, 5 and 6.
j
= 25 °C prior to surge.
Limiting values
Parameter
repetitive peak reverse
voltage
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak
forward current
total power dissipation
junction temperature
ambient temperature
storage temperature
BAV99
BAV99S
BAV99W
BAV99
BAV99S
BAV99W
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 18 November 2010
Conditions
square wave
T
T
T
amb
sp
amb
t
t
t
p
p
p
≤ 85 °C
= 1 μs
= 1 ms
= 1 s
≤ 25 °C
≤ 25 °C
[1][4]
High-speed switching diodes
[1]
[2]
[1]
[1]
[2]
[3]
[5]
BAV99 series
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
−65
−65
© NXP B.V. 2010. All rights reserved.
Max
100
100
215
125
200
150
130
500
4
1
0.5
250
250
200
150
+150
+150
Unit
V
V
mA
mA
mA
mA
mA
mA
A
A
A
mW
mW
mW
°C
°C
°C
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