BAV99 /T3 NXP Semiconductors, BAV99 /T3 Datasheet - Page 5
![SWITCHING DIODE, 100V 215mA, SOT-23](/photos/22/12/221274/4243248_sml.jpg)
BAV99 /T3
Manufacturer Part Number
BAV99 /T3
Description
SWITCHING DIODE, 100V 215mA, SOT-23
Manufacturer
NXP Semiconductors
Datasheet
1.BAV99_T3.pdf
(14 pages)
Specifications of BAV99 /T3
Diode Type
Small Signal
Forward Current If(av)
215mA
Repetitive Reverse Voltage Vrrm Max
85V
Forward Voltage Vf Max
1.25V
Reverse Recovery Time Trr Max
4ns
Forward Surge Current Ifsm Max
4A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NXP Semiconductors
BAV99_SER
Product data sheet
Fig 1.
Fig 3.
(mA)
(pF )
I
10
(1) T
(2) T
(3) T
(4) T
F
C
10
10
0.8
0.6
0.4
0.2
10
d
−1
1
3
2
0
0
Forward current as a function of forward
voltage; typical values
f = 1 MHz; T
voltage; typical values
0
Diode capacitance as a function of reverse
amb
amb
amb
amb
= 150 °C
= 85 °C
= 25 °C
= −40 °C
0.2
4
0.4
amb
(1)
= 25 °C
(2)
0.6
(3)
8
0.8
(4)
1.0
12
All information provided in this document is subject to legal disclaimers.
006aab132
V
1.2
R
V
mbg446
(V)
F
(V)
Rev. 8 — 18 November 2010
1.4
16
Fig 2.
Fig 4.
I
(μA)
FSM
(A)
I
10
10
10
10
10
(1) T
(2) T
(3) T
(4) T
10
R
10
10
10
10
−1
−2
−3
−4
−5
−1
1
1
2
2
0
1
Reverse current as a function of reverse
voltage; typical values
Based on square wave currents.
T
Non-repetitive peak forward current as a
function of pulse duration; maximum values
amb
amb
amb
amb
j
= 25 °C; prior to surge
= 150 °C
= 85 °C
= 25 °C
= −40 °C
20
10
40
High-speed switching diodes
10
BAV99 series
2
(1)
(2)
(3)
(4)
60
10
© NXP B.V. 2010. All rights reserved.
3
80
006aab133
t
p
V
(μs)
R
mbg704
(V)
100
10
4
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