2MBI200U4H-120-50 FUJI ELECTRIC, 2MBI200U4H-120-50 Datasheet - Page 7
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2MBI200U4H-120-50
Manufacturer Part Number
2MBI200U4H-120-50
Description
IGBT, 2 PACK MOD, 1200V, 200A, M234
Manufacturer
FUJI ELECTRIC
Datasheet
1.2MBI200U4H-120-50.pdf
(13 pages)
Specifications of 2MBI200U4H-120-50
Module Configuration
Dual
Transistor Polarity
N Channel
Dc Collector Current
200A
Collector Emitter Voltage Vces
2.05V
Power Dissipation Max
1.04kW
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
Module
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2MBI200U4H-120-50
Manufacturer:
XILINX
Quantity:
101
Part Number:
2MBI200U4H-120-50
Manufacturer:
FUJI/富士电机
Quantity:
20 000
Test
cate-
gories
1 High temperature
2 High temperature
3 Temperature
4 Intermitted
Electrical
Visual
Note : Each parameter measurement read-outs shall be made after stabilizing the components
characteristic
inspection
Humidity Bias
(Power cycle)
( for IGBT )
Reverse Bias
Bias (for gate)
Operating Life
Test items
Item
at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.
at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.
And in case of the wetting tests, for example, moisture resistance tests, each component
And in case of the wetting tests, for example, moisture resistance tests, each component
shall be made wipe or dry completely before the measurement.
shall be made wipe or dry completely before the measurement.
Each parameter measurement read-outs shall be made after stabilizing the components
Leakage current
Gate threshold voltage VGE(th)
Saturation voltage
Forward voltage
Thermal
Isolation voltage
Visual inspection
resistance
Peeling
Plating
and the others
Characteristic
Test temp.
Bias Voltage
Bias Method
Test duration
Test temp.
Bias Voltage
Bias Method
Test duration
Test temp.
Relative humidity
Bias Voltage
Bias Method
Test duration
ON time
OFF time
Test temp.
Number of cycles
IGBT
FWD
Test methods and conditions
Reliability Test Items
Failure Criteria
VCE(sat)
or
Symbol
±IGES
ICES
Viso
VF
VGE
: Ta = 125±5 ℃
: VC = 0.8×VCES
: Applied DC voltage to C-E
: 1000hr.
: Ta = 125±5 ℃
: VC = VGE = +20V or -20V
: Applied DC voltage to G-E
: 1000hr.
: 85±2
: 85±5%
: VC = 0.8×VCES
: Applied DC voltage to C-E
: 1000hr.
: 2 sec.
: 18 sec.
:
: 15000 cycles
VF
-
VCE
VGE = 0V
VCE = 0V
VGE = 0V
Tj ≦ 150 ℃, Ta=25±5 ℃
(Tj ≦ 150 ℃)
(Tj ≦ 150 ℃)
Tj=100±5 deg
Lower limit Upper limit
o
LSL×0.8
C
The visual sample
Broken insulation
Failure criteria
-
-
-
-
-
-
MS5F6035
LSL : Lower specified limit.
USL : Upper specified limit.
USL×1.2
USL×1.2
USL×1.2
USL×1.2
USL×1.2
USL×2
USL×2
Unit
(Aug.-2001 edition)
mA
mA
mV
mV
Condition code C
Test Method 101
Test Method 101
Test Method 102
Test Method 106
EIAJ ED-4701
V
V
-
-
A
Reference
norms
Note
Number
sample
of
5
5
5
5
H04-004-03a
7
Accept-
ance
number
( 0 : 1 )
( 0 : 1 )
( 0 : 1 )
( 0 : 1 )
13
a