2MBI200U4H-120-50 FUJI ELECTRIC, 2MBI200U4H-120-50 Datasheet - Page 8
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2MBI200U4H-120-50
Manufacturer Part Number
2MBI200U4H-120-50
Description
IGBT, 2 PACK MOD, 1200V, 200A, M234
Manufacturer
FUJI ELECTRIC
Datasheet
1.2MBI200U4H-120-50.pdf
(13 pages)
Specifications of 2MBI200U4H-120-50
Module Configuration
Dual
Transistor Polarity
N Channel
Dc Collector Current
200A
Collector Emitter Voltage Vces
2.05V
Power Dissipation Max
1.04kW
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
Module
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2MBI200U4H-120-50
Manufacturer:
XILINX
Quantity:
101
Part Number:
2MBI200U4H-120-50
Manufacturer:
FUJI/富士电机
Quantity:
20 000
cate-
gorie
Test
s
1 Terminal Strength
2 Mounting Strength
3 Vibration
4 Shock
1 High Temperature Storage
2 Low Temperature Storage
3 Temperature Humidity
4 Unsaturated
5 Temperature Cycle
6 Thermal Shock
1 High temperature Reverse Bias
2 High temperature Bias
3 Temperature Humidity Bias
4 Intermitted Operating Life
(Pull test)
( for gate )
(Power cycling)
( for IGBT )
Pressurized Vapor
Storage
Test items
Reliability Test Results
(Aug.-2001 edition)
Condition code B
Condition code B
Condition code A
Condition code C
Test Method 401
Test Method 402
Test Method 403
Test Method 404
Test Method 201
Test Method 202
Test Method 103
Test Method 103
Test Method 105
Test Method 307
Test Method 101
Test Method 101
Test Method 102
Test Method 106
EIAJ ED-4701
Test code C
Test code E
Reference
method Ⅰ
MethodⅠ
methodⅡ
MS5F6035
norms
* under confirmation
Number
sample
of test
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Number
sample
failure
of
0
0
0
0
0
0
0
0
0
0
0
*
*
*
H04-004-03a
8
13
a