IRG7PH35UD1-EP International Rectifier, IRG7PH35UD1-EP Datasheet - Page 2

• Manufacturer Part Number: IRG7PH35UD1-EP
• Description: INSULATED GATE BIPOLAR TRANSISTOR
• Manufacturer: International Rectifier

Specifications of IRG7PH35UD1-EP

• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 179mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Continuous Collector Current Ic: 50A
• Package: TO-247
• Circuit: Co-Pack
• Switching: Soft
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 1200
• Ic @ 25c (a): 50
• Ic @ 100c (a): 25
• Vce(on)@25c Typ (v): 1.90
• Vce(on)@25c Max (v): 2.20
• Ets Typ (mj): 1.68
• Ets Max (mj): 2.15
• Vf Typ: 1.15
• Pd @25c (w): 179
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

V
V
∆V
V
V
gfe
I
V
I
Q
Q
Q
E
t
t
E
t
t
C
C
C
RBSOA
Electrical Characteristics @ T
Switching Characteristics @ T
IRG7PH35UD1PbF/IRG7PH35UD1-EP
CES
GES
d(off)
f
d(off)
f
(BR)Transient
Notes:

‚
ƒ
„
…
(BR)CES
CE(on)
GE(th)
FM
off
off
ies
oes
res
g
ge
gc
(BR)CES
R
V
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
Rating for Hard Switching conditions. Rating is higher in Soft Switching conditions.
2
CC
θ
is measured at T
/∆T
= 80% (V
J
Collector-to-Emitter Breakdown Voltage
Repetitive Transient Collector-to-Emitter Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-Off Switching Loss
Turn-Off delay time
Fall time
Turn-Off Switching Loss
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
CES
), V
J
GE
approximately 90°C.
= 20V, R
Parameter
Parameter
G
= 10Ω.
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
(BR)CES
safely.
Min.
1200
Min.
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
FULL SQUARE
Typ.
Typ.
1120
1940
1.15
1.08
120
620
160
190
210
120
1.2
1.9
2.3
1.0
22
85
15
35
80
40
—
—
—
—
Max.
Max.
1300
1.26
±100
100
130
850
180
105
2.2
6.0
20
50
—
—
—
—
—
—
—
—
—
—
—
—
Units
Units
V/°C V
µA
nA
nC
pF
µJ
ns
µJ
ns
V
V
V
V
S
V
V
V
I
I
V
V
V
V
I
I
V
I
V
V
I
R
Energy losses include tail
I
R
I
R
Energy losses include tail
I
R
V
V
f = 1.0Mhz
T
V
Rg = 10Ω, V
C
C
F
F
C
C
C
C
C
J
GE
GE
GE
CE
CE
GE
GE
GE
GE
CC
GE
CC
CC
G
G
G
G
= 20A
= 20A, T
= 20A, V
= 20A, V
= 20A
= 20A, V
= 20A, V
= 20A, V
= 20A, V
= 150°C, I
= 10Ω, L = 200µH,L
= 10Ω, L = 200µH,L
= 10Ω, L = 200µH,L
= 10Ω, L = 200µH,L
= V
= 50V, I
= 0V, I
= 0V, T
= 0V, I
= 0V, V
= 0V, V
= ±30V
= 15V
= 600V
= 0V
= 30V
= 960V, Vp =1200V
Conditions
GE
, I
J
C
C
GE
GE
CC
CC
CC
CC
J
C
CE
CE
C
= 150°C
GE
= 100µA
= 1mA (25°C-150°C)
C
= 75°C, PW
= 600µA
= 20A, PW = 30µs
= 15V, T
= 15V, T
= 600V, V
= 600V, V
= 600V, V
= 600V, V
= 1200V
= 1200V, T
= 80A
= +20V to 0V
Conditions
J
J
S
S
S
S
GE
GE
GE
GE
= 25°C
= 150°C
= 150nH, T
= 150nH, T
= 150nH, T
= 150nH, T
J
=15V
= 15V
= 15V
= 15V
= 150°C
10µs
www.irf.com
J
J
J
J
= 25°C
= 25°C
= 150°C
= 150°C