IRG7PH35UD1-EP International Rectifier, IRG7PH35UD1-EP Datasheet - Page 6

• Manufacturer Part Number: IRG7PH35UD1-EP
• Description: INSULATED GATE BIPOLAR TRANSISTOR
• Manufacturer: International Rectifier

Specifications of IRG7PH35UD1-EP

• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 179mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Continuous Collector Current Ic: 50A
• Package: TO-247
• Circuit: Co-Pack
• Switching: Soft
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 1200
• Ic @ 25c (a): 50
• Ic @ 100c (a): 25
• Vce(on)@25c Typ (v): 1.90
• Vce(on)@25c Max (v): 2.20
• Ets Typ (mj): 1.68
• Ets Max (mj): 2.15
• Vf Typ: 1.15
• Pd @25c (w): 179
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRG7PH35UD1PbF/IRG7PH35UD1-EP
6
0.001
0.001
0.01
0.01
0.1
0.1
10
1E-006
1
1E-006
1
D = 0.50
Fig. 20. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
D = 0.50
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
0.05
0.20
0.10
0.02
0.01
0.02
0.10
0.20
0.05
0.01
SINGLE PULSE
( THERMAL RESPONSE )
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
1E-005
0.0001
t 1 , Rectangular Pulse Duration (sec)
t 1 , Rectangular Pulse Duration (sec)
0.0001
τ
τ
J
J
τ
τ
J
τ
J
τ
1
Ci= τi/Ri
1
τ
Ci= τi/Ri
τ
1
Ci
1
Ci
0.001
i/Ri
i/Ri
R
R
1
R
1
R
1
1
τ
τ
2
0.001
2
τ
R
τ
2
R
2
2
R
2
R
2
2
R
τ
R
0.01
τ
3
3
R
3
τ
3
R
τ
3
3
3
3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
τ
R
4
R
4
τ
4
τ
R
4
4
R
4
4
4
τ
τ
C
C
τ
τ
Ri (°C/W) τi (sec)
0.01
Ri (°C/W) τi (sec)
0.017
0.218
0.299
0.177
0.00756
0.56517
0.54552
0.25085
0.1
0.000013
0.000141
0.002184
0.013107
0.000005
0.000677
0.003514
0.019551
0.1
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