SI1905BDH-T1-E3 Vishay, SI1905BDH-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1905BDH-T1-E3
• Description: P CHANNEL MOSFET, -8V, SC-70
• Manufacturer: Vishay

Specifications of SI1905BDH-T1-E3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -630mA
• Drain Source Voltage Vds: -8V
• On Resistance Rds(on): 1.2ohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.542 Ohms
• Drain-source Breakdown Voltage: - 8 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.58 A
• Power Dissipation: 3.01 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-70
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74638
S10-0792-Rev. C, 05-Apr-10
2.0
1.6
1.2
0.8
0.4
1.8
1.5
1.2
0.9
0.6
0.3
On-Resistance vs. Drain Current and Gate Voltage
5
4
3
2
1
0
0
0
0
0
0
I
D
V
= 0.57 A
GS
0.3
= 1.8 V
0.6
V
0.3
DS
Output Characteristics
Q
V
g
- Drain-to-Source Voltage (V)
DS
0.6
I
- Total Gate Charge (nC)
D
= 4 V
Gate Charge
- Drain Current (A)
1.2
V
GS
0.9
0.6
= 2.5 V
V
GS
1.8
= 5 V thru 2.5 V
1.2
V
V
DS
V
V
0.9
GS
GS
GS
= 6.4 V
2.4
= 4.5 V
= 2 V
= 1.5 V
1.5
1.8
1.2
3.0
100
0.5
0.4
0.3
0.2
0.1
1.8
1.5
1.2
0.9
0.6
0.3
80
60
40
20
0
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
- 25
V
V
T
V
V
J
GS
GS
0.6
GS
Transfer Characteristics
DS
= 125 °C
T
2
0
T
J
= 4.5 V, I
= 2.5 V, I
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
= 25 °C
C
25
Capacitance
rss
D
D
= 0.57 A
= 0.47 A
1.2
Vishay Siliconix
50
4
V
Si1905BDH
T
C
GS
J
iss
C
75
= - 55 °C
oss
= 1.8 V, I
www.vishay.com
100
1.8
6
D
= 0.06 A
125
150
2.4
8
3