SI1905BDH-T1-E3 Vishay, SI1905BDH-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI1905BDH-T1-E3
• Description: P CHANNEL MOSFET, -8V, SC-70
• Manufacturer: Vishay

Specifications of SI1905BDH-T1-E3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -630mA
• Drain Source Voltage Vds: -8V
• On Resistance Rds(on): 1.2ohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.542 Ohms
• Drain-source Breakdown Voltage: - 8 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.58 A
• Power Dissipation: 3.01 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-70
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si1905BDH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
0.01
0.8
0.7
0.6
0.5
0.4
0.1
10
- 50
1
0
- 25
Source-Drain Diode Forward Voltage
0.2
I
D
V
T
= 250 µA
SD
0
J
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
25
- Temperature (°C)
50
0.6
T
75
J
0.001
0.8
= 25 °C
0.01
0.1
10
1
100
0.1
* V
Safe Operating Area, Junction-to-Ambient
1.0
125
GS
Single Pulse
T
A
= 25 °C
Limited by R
minimum V
V
150
1.2
DS
- Drain-to-Source Voltage (V)
GS
DS(on)
at which R
1
*
DS(on)
2.0
1.5
1.0
0.5
0
5
4
3
2
1
0
10
0
is specified
-3
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
10
-2
1
100 ms
1 s
10 s
DC
10
V
GS
- Gate-to-Source Voltage (V)
10
-1
2
Time (s)
S10-0792-Rev. C, 05-Apr-10
1
Document Number: 74638
3
10
I
D
T
= 0.57 A
T
A
A
= 125 °C
= 25 °C
4
100
600
5