SI1905BDH-T1-E3 Vishay, SI1905BDH-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI1905BDH-T1-E3
• Description: P CHANNEL MOSFET, -8V, SC-70
• Manufacturer: Vishay

Specifications of SI1905BDH-T1-E3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -630mA
• Drain Source Voltage Vds: -8V
• On Resistance Rds(on): 1.2ohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.542 Ohms
• Drain-source Breakdown Voltage: - 8 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.58 A
• Power Dissipation: 3.01 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-70
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74638
S10-0792-Rev. C, 05-Apr-10
0.8
0.6
0.4
0.2
0.0
0
25
D
T
C
is based on T
Current Derating*
50
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
150
0.5
0.4
0.3
0.2
0.1
0.0
0
25
T
C
50
- Case Temperature (°C)
Power Derating
75
Vishay Siliconix
Si1905BDH
100
www.vishay.com
125
150
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