SI1905BDH-T1-E3 Vishay, SI1905BDH-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI1905BDH-T1-E3
• Description: P CHANNEL MOSFET, -8V, SC-70
• Manufacturer: Vishay

Specifications of SI1905BDH-T1-E3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -630mA
• Drain Source Voltage Vds: -8V
• On Resistance Rds(on): 1.2ohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.542 Ohms
• Drain-source Breakdown Voltage: - 8 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.58 A
• Power Dissipation: 3.01 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-70
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si1905BDH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74638.
www.vishay.com
6
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
0.05
0.02
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
Duty Cycle = 0.5
0.2
0.1
Single Pulse
Single Pulse
10
-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
10
1
-1
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
DM
JM
- T
A
t
1
1
S10-0792-Rev. C, 05-Apr-10
= P
t
2
Document Number: 74638
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 400 °C/W
6
0
1
0
0