IRF7410PBF International Rectifier, IRF7410PBF Datasheet - Page 4

• Manufacturer Part Number: IRF7410PBF
• Description: P CHANNEL MOSFET, -12V, 16A, SOIC
• Manufacturer: International Rectifier

Specifications of IRF7410PBF

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -16A
• Drain Source Voltage Vds: -12V
• On Resistance Rds(on): 7mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -900mV
• Channel Type: P
• Current, Drain: -16 A
• Gate Charge, Total: 91 nC
• Package Type: SO-8
• Polarization: P-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 7 Milliohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 271 ns
• Time, Turn-on Delay: 13 ns
• Transconductance, Forward: 55 S
• Voltage, Breakdown, Drain To Source: -12 V
• Voltage, Drain To Source: –12 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±8 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
14000
12000
10000
8000
6000
4000
2000
100
0.1
10
1
0.2
0
Fig 7. Typical Source-Drain Diode
1
Fig 5. Typical Capacitance Vs.
Coss
-V
Ciss
Crss
SD
T = 150 C
-V DS , Drain-to-Source Voltage (V)
Drain-to-Source Voltage
J
0.4
,Source-to-Drain Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss
C oss = C ds + C gd
°
= C gd
0.6
T = 25 C
10
J
f = 1 MHZ
°
0.8
V
GS
= 0 V
1.0
100
1000
100
Fig 8. Maximum Safe Operating Area
10
6
5
4
3
2
1
0
1
0.1
0
Fig 6. Typical Gate Charge Vs.
I =
D
T
T
Single Pulse
C
J
= 25 C °
= 150 C
OPERATION IN THIS AREA LIMITED
-16A
Gate-to-Source Voltage
-V
20
DS
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
40
1
BY R
60
DS(on)
V
DS
=-9.6V
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80
10
100us
1ms
10ms
100
120
100