SI1032R-T1-GE3 Vishay, SI1032R-T1-GE3 Datasheet - Page 4

N CHANNEL MOSFET, 20V, 140mA SC-75A

SI1032R-T1-GE3

Manufacturer Part Number
SI1032R-T1-GE3
Description
N CHANNEL MOSFET, 20V, 140mA SC-75A
Manufacturer
Vishay
Datasheet

Specifications of SI1032R-T1-GE3

Transistor Polarity
N Channel
Continuous Drain Current Id
200mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
10ohm
Rds(on) Test Voltage Vgs
6V
Threshold Voltage Vgs Typ
700mV
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 Ohm @ 200mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
140mA
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
0.75nC @ 4.5V
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416, EMT3, 3-SSMini
Voltage Vgs Max
6V
Operating Temperature Range
-55°C To +150°C
Transistor
RoHS Compliant
Transistor Case Style
SC-89
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI1032R-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1032R-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
60 867
Part Number:
SI1032R-T1-GE3
Manufacturer:
LT
Quantity:
213
Part Number:
SI1032R-T1-GE3
Manufacturer:
VISHAY
Quantity:
180
Company:
Part Number:
SI1032R-T1-GE3,,18578,SC-70,VBSEMI
0
Company:
Part Number:
SI1032R-T1-GE3,,2189,SC-75A,VISHAY,,,,19+
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Company:
Part Number:
SI1032R-T1-GE3,,33450,SOT-523,VISHAY
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Company:
Part Number:
SI1032R-T1-GE3,,3500,SC89-3,VISHAY
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Company:
Part Number:
SI1032R-T1-GE3,,3500,SC89-3,VISHAY
0
Si1032R/X
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71172.
www.vishay.com
4
0.01
0.1
- 0.1
- 0.2
- 0.3
0.3
0.2
0.1
0.0
2
1
10
- 50
- 4
Threshold Voltage Variance vs. Temperature
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 25
Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A, Si1032R Only)
0
10
T
Single Pulse
J
- 3
- Temperature (°C)
25
I
D
50
= 0.25 mA
7
6
5
4
3
2
1
0
- 50
10
A
- 2
75
= 25 °C, unless otherwise noted)
- 25
100
BV
Square Wave Pulse Duration (s)
0
GSS
T
125
J
10
- Temperature (°C)
vs. Temperature
- 1
25
50
75
1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
- 50
125
- 25
V
GS
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
= 2.8 V
0
P
DM
I
0
JM
GSS
T
- T
J
- Temperature (°C)
A
t
1
vs. Temperature
= P
25
t
2
DM
S10-2544-Rev. F, 08-Nov-10
Z
thJA
Document Number: 71172
100
thJA
50
t
t
1
2
(t)
= 500 °C/W
75
6
100
0
0
125