SI4346DY-T1-GE3 Vishay, SI4346DY-T1-GE3 Datasheet - Page 3
SI4346DY-T1-GE3
Manufacturer Part Number
SI4346DY-T1-GE3
Description
N CH MOSFET
Manufacturer
Vishay
Datasheet
1.SI4346DY-T1-E3.pdf
(6 pages)
Specifications of SI4346DY-T1-GE3
Transistor Polarity
N Channel
Continuous Drain Current Id
5.9A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
19mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2V
Power Dissipation Pd
1.31W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4346DY-T1-GE3
Manufacturer:
VISHAY
Quantity:
7 500
Part Number:
SI4346DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72958
S09-0392-Rev. E, 09-Mar-09
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
0.1
40
10
1
6
5
4
3
2
1
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
1
= 8 A
On-Resistance vs. Drain Current
5
= 15 V
0.3
V
V
SD
T
2
GS
J
Q
= 150 °C
g
-
= 4.5 V
I
10
D
-
Source-to-Drain Voltage (V)
3
-
Total Gate Charge (nC)
Gate Charge
0.6
Drain Current (A)
4
15
5
0.9
20
T
6
V
J
GS
= 25 °C
= 10 V
1.2
7
25
8
1.5
30
9
1200
1000
0.05
0.04
0.03
0.02
0.01
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
0
- 50
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
D
- 25
rss
GS
= 8 A
5
= 10 V
2
V
V
T
DS
GS
0
J
-
10
- Gate-to-Source Voltage (V)
-
Junction Temperature (°C)
Drain-to-Source Voltage (V)
C
Capacitance
25
4
oss
I
D
C
15
= 8 A
50
iss
Vishay Siliconix
6
75
Si4346DY
20
www.vishay.com
100
8
25
125
10
30
150
3