SI4346DY-T1-GE3 Vishay, SI4346DY-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI4346DY-T1-GE3
• Description: N CH MOSFET
• Manufacturer: Vishay

Specifications of SI4346DY-T1-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.9A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Power Dissipation Pd: 1.31W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 72958
S09-0392-Rev. E, 09-Mar-09
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Duty Cycle = 0.5
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Single Pulse
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Normalized Thermal Transient Impedance, Junction-to-Foot
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Vishay Siliconix
Si4346DY
www.vishay.com
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