SI4346DY-T1-GE3 Vishay, SI4346DY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4346DY-T1-GE3
• Description: N CH MOSFET
• Manufacturer: Vishay

Specifications of SI4346DY-T1-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.9A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Power Dissipation Pd: 1.31W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4346DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.01
- 0.2
- 0.4
- 0.6
- 0.8
0.1
0.4
0.2
0.0
2
1
- 50
10 -
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 25
Single Pulse
0
Threshold Voltage
T
10 -
J
- Temperature (° C)
25
3
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
0.01
10 -
100
0.1
10
1
100
0.1
2
* V
Limited by R
Limited
GS
I
D(on)
125
Single Pulse
T
>
A
Square Wave Pulse Duration (s)
minimum V
= 25 °C
V
150
DS
DS(on)
10 -
- Drain-to-Source Voltage (V)
Safe Operating Area
1
1
*
GS
at which R
BVDSS Limited
DS(on)
10
1
100
80
60
40
20
0
is specified
10 -
I
DM
3
Single Pulse Power, Junction-to-Ambient
Limited
1 ms
10 ms
100 ms
1 s
10 s
dc
100
10 -
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
2
DM
JM
-
T
t
1
A
= P
t
2
Time (s)
S09-0392-Rev. E, 09-Mar-09
DM
10 -
Z
Document Number: 72958
thJA
1
thJA
100
t
t
1
2
(t)
= 71 °C/W
1
600
10