SUM110N04-2M1P-E3 Vishay, SUM110N04-2M1P-E3 Datasheet - Page 3

• Manufacturer Part Number: SUM110N04-2M1P-E3
• Description: N CHANNEL MOSFET, 40V, 11A, TO-263
• Manufacturer: Vishay

Specifications of SUM110N04-2M1P-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 2.4mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 2.5V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0021 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 29 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69983
S-80680-Rev. A, 31-Mar-08
24000
16000
8000
400
320
240
160
250
200
150
100
50
80
0
0
0
0.0
0
0
C
T
rss
C
C
= 25 °C
oss
15
0.5
V
V
V
GS
DS
10
DS
Output Characteristics
V
- Drain-to-Source Voltage (V)
= 4 V
GS
Transconductance
- Drain-to-Source Voltage (V)
30
I
Capacitance
D
= 10 thru 5 V
C
- Drain Current (A)
1.0
iss
T
C
= - 55 °C
20
45
1.5
60
T
V
C
30
GS
= 125 °C
2.0
= 3 V
75
New Product
40
2.5
90
0.0040
0.0032
0.0024
0.0016
0.0008
0.0000
10
5
4
3
2
1
0
8
6
4
2
0
0
0
0
I
D
= 20 A
V
20
On-Resistance vs. Drain Current
DS
50
V
GS
Transfer Characteristics
= 10 V
SUM110N04-2m1P
1
Q
- Gate-to-Source Voltage (V)
T
T
g
C
I
C
40
- Total Gate Charge (nC)
D
= 125 °C
V
= 25 °C
Gate Charge
- Drain Current (A)
DS
100
V
V
= 20 V
GS
GS
60
Vishay Siliconix
= 10 V
2
= 4.5 V
150
80
V
www.vishay.com
DS
3
= 30 V
T
200
C
100
= - 55 °C
120
250
4
3