SUM110N04-2M1P-E3 Vishay, SUM110N04-2M1P-E3 Datasheet - Page 5

• Manufacturer Part Number: SUM110N04-2M1P-E3
• Description: N CHANNEL MOSFET, 40V, 11A, TO-263
• Manufacturer: Vishay

Specifications of SUM110N04-2M1P-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 2.4mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 2.5V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0021 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 29 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 69983
S-80680-Rev. A, 31-Mar-08
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280
210
140
70
0.01
0
0.1
0
1
10
http://www.vishay.com/ppg?69983.
0.1
-4
Single Pulse
0.2
Duty Cycle = 0.5
25
0.02
D
0.05
T
is based on T
Package Limited
J
Current Derating*
50
- Junction to Case (°C)
75
J(max)
Normalized Thermal Transient Impedance, Junction-to-Case
10
100
-3
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
New Product
Square Wave Pulse Duration (s)
150
10
-2
400
350
300
250
200
150
100
50
0
0
25
SUM110N04-2m1P
T
10
J
50
-1
- Junction to Case (°C)
Power Derating
75
Vishay Siliconix
100
www.vishay.com
125
1
150
5