BUK6207-55C NXP Semiconductors, BUK6207-55C Datasheet
BUK6207-55C
Specifications of BUK6207-55C
Related parts for BUK6207-55C
BUK6207-55C Summary of contents
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... BUK6207-55C N-channel TrenchMOS intermediate level FET Rev. 2 — 17 September 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...
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... V; see GS see Figure 14 Simplified outline SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 BUK6207-55C N-channel TrenchMOS intermediate level FET Min ≤ sup = Figure 13; Graphic symbol ...
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... Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 BUK6207-55C Min Max - 55 [1] -16 16 [2] -20 20 [3] Figure Figure 383 - 158 -55 175 -55 175 [ ...
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... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature DC 10 All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 BUK6207-55C 0 50 100 150 T =10 μ 100 μ 100 (V) DS © NXP B.V. 2010. All rights reserved. ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK6207-55C Product data sheet N-channel TrenchMOS intermediate level FET Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 BUK6207-55C Min Typ Max - - 0.95 003aae317 δ ...
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... Ω R G(ext) from upper edge of drain mounting base to centre of die ; °C j from source lead to source bond pad ; °C j All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 BUK6207-55C Min Typ Max Unit 1.8 2.3 2 3.3 V 0.8 ...
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... A; dI /dt = -100 A/µ 003aae891 I ( (A) D Fig 6. 003aae893 R DSon (mΩ ° (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 BUK6207-55C N-channel TrenchMOS intermediate level FET Min Typ - 0. 100 300 μ 25° Output characteristics: drain current as a function of drain-source voltage ...
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... Fig 10. Gate-source threshold voltage as a function of 003aae895 4 4 100 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 BUK6207-55C N-channel TrenchMOS intermediate level FET 4 3 max typ 2 min 120 junction temperature 2 ...
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... Q GD 003aaa508 Fig 14. Gate-source voltage as a function of gate 003aae897 (A) C iss C oss C rss (V) DS Fig 16. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 BUK6207-55C N-channel TrenchMOS intermediate level FET 25° charge; typical values ...
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... REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 BUK6207-55C N-channel TrenchMOS intermediate level FET min 10.4 2.95 0.5 2.285 4.57 9 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK6207-55C v.2 20100917 • Modifications: Status changed from Objective to Product. BUK6207-55C v.1 20100909 BUK6207-55C Product data sheet N-channel TrenchMOS intermediate level FET Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 BUK6207-55C © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 September 2010 BUK6207-55C Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 17 September 2010 Document identifier: BUK6207-55C ...