BUK6213-30C NXP Semiconductors, BUK6213-30C Datasheet - Page 7

• Manufacturer Part Number: BUK6213-30C
• Description: MOSFET,N CH,30V,33A,SOT428
• Manufacturer: NXP Semiconductors

Specifications of BUK6213-30C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 11.9mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D-PAK
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
BUK6213-30C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
g
(S)
(A)
I
fs
D
40
30
20
10
50
40
30
20
10
0
0
drain current; typical values
function of gate-source voltage; typical values
T
Forward transconductance as a function of
Transfer characteristics: drain current as a
0
0
j
Characteristics
= 25 °C; V
Parameter
source-drain voltage
reverse recovery time
recovered charge
1
10
T
DS
j
2
= 175 °C
= 15 V
20
…continued
3
30
T
4
j
= 25 °C
40
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003aae916
003aae918
5
V
I
GS
D
(A)
(V)
Conditions
I
see
I
V
S
S
Rev. 01 — 4 October 2010
50
GS
6
= 25 A; V
= 20 A; dI
Figure 16
= 0 V; V
GS
S
DS
/dt = -100 A/µs;
Fig 6.
Fig 8.
= 0 V; T
= 25 V
R
(mΩ)
DSon
(A)
I
D
N-channel TrenchMOS intermediate level FET
60
40
20
30
25
20
15
10
0
5
0
j
function of drain-source voltage; typical values
of gate-source voltage; typical values
T
Output characteristics: drain current as a
Drain-source on-state resistance as a function
0
= 25 °C;
0
j
= 25 °C; t
10
0.5
4
p
8
= 300 μs
6
BUK6213-30C
Min
-
-
-
1
8
5
V
GS
Typ
0.95
31.9
25.4
(V) = 4.5
1.5
12
© NXP B.V. 2010. All rights reserved.
V
003aae919
003aae917
V
3.8
3.6
4
3.4
3.2
GS
DS
Max
1.2
-
-
(V)
(V)
16
2
Unit
V
ns
nC
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