BUK6215-75C NXP Semiconductors, BUK6215-75C Datasheet - Page 9

• Manufacturer Part Number: BUK6215-75C
• Description: MOSFET,N CH,75V,57A,SOT428
• Manufacturer: NXP Semiconductors

Specifications of BUK6215-75C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 12.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK6215-75C
Product data sheet
Fig 13. Gate charge waveform definitions
Fig 15. Input, output and reverse transfer capacitances
(pF)
10
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
All information provided in this document is subject to legal disclaimers.
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DS
003aaa508
C
C
C
(V)
oss
iss
rss
10
Rev. 02 — 4 October 2010
2
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain
V
(V)
(A)
10
GS
80
60
40
20
I
S
8
6
4
2
0
0
charge; typical values
voltage; typical values
0
0
V
DS
= 14V
0.3
T
j
= 175 ° C
20
0.6
BUK6215-75C
N-channel TrenchMOS FET
V
40
DS
= 60V
0.9
T
j
= 25 ° C
60
© NXP B.V. 2010. All rights reserved.
1.2
Q
003aae768
003aae767
G
V
SD
(nC)
(V)
1.5
80
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