BUK624R5-30C NXP Semiconductors, BUK624R5-30C Datasheet - Page 7

• Manufacturer Part Number: BUK624R5-30C
• Description: MOSFET,N CH,30V,90A,SOT428
• Manufacturer: NXP Semiconductors

Specifications of BUK624R5-30C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3800µohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-428
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
BUK624R5-30C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
(A)
g
I
125
100
D
fs
100
75
50
25
75
50
25
0
0
drain current; typical values
function of drain-source voltage; typical values
Forward transconductance as a function of
Output characteristics; drain current as a
0
0
Characteristics
10.0
Parameter
source-drain voltage
reverse recovery time
recovered charge
0.5
25
5.0
4.5
…continued
50
1
V
1.5
75
GS
Conditions
I
see
I
V
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S
S
(V) =
V
DS
003aae308
003aae595
= 25 A; V
= 20 A; dI
I
DS
D
Figure 16
(A)
= 25 V
(V)
4.0
3.8
3.6
3.4
3.2
Rev. 2 — 17 September 2010
100
2
GS
S
/dt = -100 A/µs; V
= 0 V; T
Fig 6.
Fig 8.
j
= 25 °C;
(m)
R
(A)
DS on
I
D
100
N-channel TrenchMOS intermediate level FET
40
30
20
10
80
60
40
20
0
0
of gate-source voltage; typical values
function of gate-source voltage; typical values
Drain-source on-state resistance as a function
Transfer characteristics: drain current as a
GS
0
0
= 0 V;
T
j
= 175 C
5
2
BUK624R5-30C
Min
-
-
-
10
T
j
= 25 C
4
Typ
0.8
46
57
15
© NXP B.V. 2010. All rights reserved.
V
V
GS
003a a e 594
003a a e 808
GS
(V)
Max
1.2
-
-
(V)
20
6
Unit
V
ns
nC
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