BUK6507-75C NXP Semiconductors, BUK6507-75C Datasheet
BUK6507-75C
Specifications of BUK6507-75C
Related parts for BUK6507-75C
BUK6507-75C Summary of contents
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... BUK6507-75C N-channel TrenchMOS FET Rev. 02 — 4 October 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...
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... Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6507-75C N-channel TrenchMOS FET Min Typ Max Unit ≤ sup = 50 Ω °C; unclamped = 60 V; ...
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... Figure °C mb ≤ 10 µs; pulsed ° ≤ 100 sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6507-75C N-channel TrenchMOS FET Min Max - 75 [1] -16 16 [2] -20 20 [3] Figure 1 - 100 [3] Figure 406 - ...
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... Product data sheet 003aae543 P der (%) 150 200 T (°C) mb Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6507-75C N-channel TrenchMOS FET 120 100 150 Normalized total power dissipation as a function of mounting base temperature =10 μ 100 μ 100 ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK6507-75C Product data sheet Conditions see Figure 4 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6507-75C N-channel TrenchMOS FET Min Typ Max - - 0.74 003aae545 t P δ = ...
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... R G(ext) from drain lead 6 mm from package to centre of die ; °C j from source lead to source bond pad ; °C j All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6507-75C N-channel TrenchMOS FET Min Typ Max = 25 ° -55 ° 1.8 2 ...
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... Figure /dt = -100 A/µ 003aae546 (A) D Fig 6. 003aae548 R (mΩ) = 175 ° (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6507-75C N-channel TrenchMOS FET Min Typ = 25 ° 129 160 (A) 120 300 μ 25° Output characteristics: drain current as a function of drain-source voltage ...
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... Fig 10. Gate-source threshold voltage as a function of 003aae550 4 4 120 160 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6507-75C N-channel TrenchMOS FET 4 GS(th) (V) 3 max @1mA 2 typ @1mA min @2.5mA 1 0 -60 0 ...
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... BUK6507-75C Product data sheet 003aaa508 Fig 14. Gate-source voltage as a function of gate 003aae552 (V) DS Fig 16. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6507-75C N-channel TrenchMOS FET 100 T = 25°C; I ...
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... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6507-75C N-channel TrenchMOS FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13.5 2 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK6507-75C v.2 20101004 • Modifications: Status changed from objective to product. • Various changes to content. BUK6507-75C v.1 20100921 BUK6507-75C Product data sheet Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6507-75C N-channel TrenchMOS FET © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 October 2010 BUK6507-75C N-channel TrenchMOS FET Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 4 October 2010 Document identifier: BUK6507-75C ...