BUK654R6-55C NXP Semiconductors, BUK654R6-55C Datasheet - Page 7

• Manufacturer Part Number: BUK654R6-55C
• Description: MOSFET,N CH,55V,92A,SOT78
• Manufacturer: NXP Semiconductors

Specifications of BUK654R6-55C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 4.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
BUK654R6-55C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
g
(A)
I
fs
160
120
D
160
120
80
40
80
40
0
0
drain current; typical values
function of gate-source voltage; typical values
T
Forward transconductance as a function of
V
Transfer characteristics: drain current as a
0
0
j
DS
Characteristics
= 25°C; V
= 25 V
Parameter
source-drain voltage
reverse recovery time
recovered charge
1
20
DS
T
j
= 25 V
= 175 °C
2
…continued
40
3
T
60
j
= 25 °C
All information provided in this document is subject to legal disclaimers.
4
003aae708
003aae710
I
V
D
GS
(A)
(V)
Rev. 02 — 14 October 2010
Conditions
I
see
I
V
80
S
S
5
GS
= 25 A; V
= 20 A; dI
Figure 16
= 0 V; V
GS
S
DS
/dt = -100 A/µs;
Fig 6.
Fig 8.
= 0 V; T
= 25 V
R
(m Ω )
DSon
(A)
I
D
200
160
120
N-channel TrenchMOS intermediate level FET
80
40
20
16
12
8
4
0
0
function of drain-source voltage; typical values
of gate-source voltage; typical values
j
T
Output characteristics: drain current as a
T
Drain-source on-state resistance as a function
0
0
= 25 °C;
j
j
= 25°C; t
= 25°C; I
2
0.5
V
p
D
GS
= 300 μs
25 A
(V) = 10 6
BUK654R6-55C
4
Min
-
-
-
1
6
5
Typ
0.83
55
112
1.5
© NXP B.V. 2010. All rights reserved.
8
V
003aae709
003aae711
V
DS
GS
Max
1.2
-
-
(V)
3.4
4.5
3.8
3.6
4
(V)
10
2
Unit
V
ns
nC
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