BUK6607-75C NXP Semiconductors, BUK6607-75C Datasheet - Page 4

• Manufacturer Part Number: BUK6607-75C
• Description: MOSFET,N CH,75V,72A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK6607-75C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK6607-75C
Product data sheet
Fig 1.
Fig 3.
(A)
(A)
I
I
10
D
D
10
10
120
100
10
80
60
40
20
-1
3
2
1
0
10
mounting base temperature.
Continuous drain current as a function of
T
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
mb
(1)
= 25°C; I
50
DM
is a single pulse
100
Limit R
1
DSon
150
= V
All information provided in this document is subject to legal disclaimers.
T
DS
003aad039
mb
/ I
(°C)
D
Rev. 2 — 17 November 2010
200
10
DC
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
50
10
2
100 ms
t
100 μ s
10 ms
1 ms
p
=10 μ s
BUK6607-75C
100
N-channel TrenchMOS FET
V
DS
(V)
150
© NXP B.V. 2010. All rights reserved.
T
mb
003aae544
03aa16
(°C)
10
200
3
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