BUK661R9-40C NXP Semiconductors, BUK661R9-40C Datasheet - Page 7

• Manufacturer Part Number: BUK661R9-40C
• Description: MOSFET,N CH,40V,120A,SOT404
• Manufacturer: NXP Semiconductors

Specifications of BUK661R9-40C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 1.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
BUK661R9-40C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
g
(A)
I
fs
250
200
150
100
D
100
50
80
60
40
20
0
0
drain current; typical values
function of drain-source voltage; typical values
Forward transconductance as a function of
Output characteristics: drain current as a
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
10
0.2
20
5
4
3.8
40
0.4
…continued
0.6
60
V
GS
Conditions
I
see
I
V
0.8
80
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S
S
DS
(V) = 3.2
003aae251
003aae248
= 25 A; V
= 20 A; dI
I
V
D
Figure 15
DS
= 25 V
(A)
3.6
3.4
3.3
(V)
100
Rev. 1 — 18 August 2010
1
GS
S
/dt = -100 A/µs; V
= 0 V; T
Fig 6.
Fig 8.
j
= 25 °C;
R
(mΩ)
(A)
DSon
I
D
N-channel TrenchMOS intermediate level FET
80
60
40
20
8
6
4
2
0
0
of gate-source voltage; typical values.
function of gate-source voltage; typical values
Drain-source on-state resistance as a function
Transfer characteristics: drain current as a
GS
0
0
= 0 V;
5
1
BUK661R9-40C
T
j
Min
-
-
-
10
= 175 ° C
2
Typ
0.8
63
127
15
3
© NXP B.V. 2010. All rights reserved.
T
003aae250
V
003aae249
V
j
GS
= 25 ° C
GS
Max
1.2
-
-
(V)
(V)
20
4
Unit
V
ns
nC
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