NID5001NT4G ON Semiconductor, NID5001NT4G Datasheet

NID5001NT4G

Manufacturer Part Number

NID5001NT4G

Description

SMART MOSFET, N, 42V, 64W, D-PAK

Manufacturer

ON Semiconductor

Datasheet

1.NID5001NT4G.pdf (5 pages)

Specifications of NID5001NT4G

Transistor Polarity

N Channel

Continuous Drain Current Id

33A

Drain Source Voltage Vds

42V

On Resistance Rds(on)

23mohm

Rds(on) Test Voltage Vgs

10V

Voltage Vgs Max

14VDC

Operating Temperature

RoHS Compliant

Threshold Voltage Vgs Typ

1.8V

Rohs Compliant

Yes

Configuration

Single

Resistance Drain-source Rds (on)

0.023 Ohms

Drain-source Breakdown Voltage

42 V

Gate-source Breakdown Voltage

+/- 14 V

Continuous Drain Current

33 A

Power Dissipation

64 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

DPAK

Minimum Operating Temperature

- 55 C

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NID5001NT4G

Manufacturer:

Quantity:

2 500

Company:

Meier Automation Equipment Co., Limited

Part Number:

NID5001NT4G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 5
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NID5001N

Self−Protected FET

with Temperature and

Current Limit

utilize ON Semicondutor’s latest MOSFET technology process to

achieve the lowest possible on−resistance per silicon area while

incorporating smart features. Integrated thermal and current limits

work together to provide short circuit protection. The devices feature

an integrated Drain−to−Gate Clamp that enables them to withstand

high energy in the avalanche mode. The Clamp also provides

additional safety margin against unexpected voltage transients.

Electrostatic Discharge (ESD) protection is provided by an integrated

Gate−to−Source Clamp.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Minimum FR4 PCB, steady state.

2. Mounted onto a 2″ square FR4 board

MAXIMUM RATINGS

April, 2006 − Rev. 8

Drain−to−Source Voltage Internally Clamped

Drain−to−Gate Voltage Internally Clamped

Gate−to−Source Voltage

Drain Current − Continuous

Total Power Dissipation

Thermal Resistance, Junction−to−Case

Single Pulse Drain−to−Source Avalanche

Energy

Operating and Storage Temperature Range

HDPlus devices are an advanced series of power MOSFETs which

Low R

Current Limitation

Thermal Shutdown with Automatic Restart

Short Circuit Protection

Avalanche Energy Specified

Slew Rate Control for Low Noise Switching

Overvoltage Clamped Protection

Pb−Free Package is Available

(1″ square, 2 oz. Cu 0.06″ thick single−sided, t = steady state).

DSS

@ T

Junction−to−Ambient (Note 1)

Junction−to−Ambient (Note 2)

= 4.5 Apk, L = 120 mH, R

Specified at Elevated Temperature

= 25 Vdc, V

= 1.0 MW)

DS(on)

= 25°C (Note 1)

= 25°C (Note 2)

Rating

= 5.0 Vdc,

= 25°C unless otherwise noted)

= 25 W)

Symbol

DGR

, T

DSS

qJC

qJA

stg

−55 to 150

Internally Limited

Value

"14

1215

1.56

1.95

120

1.0

°C/W

Unit

Vdc

°C

*Max current may be limited below this value

D5001N = Device Code

†For information on tape and reel specifications,

Gate

Input

NID5001NT4

NID5001NT4G

depending on input conditions.

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

(Clamped)

CASE 369C

42 V

Device

DSS

STYLE 2

ESD Protection

DPAK

= Year

= Work Week

= Pb−Free Package

ORDERING INFORMATION

Temperature

http://onsemi.com

Limit

23 mW @ 10 V

Overvoltage

(Pb−Free)

Protection

Package

DS(ON)

DPAK

Publication Order Number:

TYP

Current

Limit

2500/Tape & Reel

1 = Gate

2 = Drain

3 = Source

Shipping

MARKING

DIAGRAM

Drain

NID5001N/D

(Limited)

Current

Sense

Source

YWW

01NG

33 A*

D50

MAX

†

PWR

Related parts for NID5001NT4G

NID5001NT4G Summary of contents

Page 1

... R 1.95 qJC R 120 qJA R 80 qJA E 1215 mJ NID5001NT4 AS NID5001NT4G ° −55 to 150 †For information on tape and reel specifications, J stg including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com I MAX DSS ...

Page 2

MOSFET ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Clamped Breakdown Voltage = 250 mAdc Vdc 250 mAdc Vdc 150° Zero Gate Voltage Drain Current (V ...

Page 3

0.5 1 1 ...

Page 4

0. 25°C J 0.1 0.08 0.06 0.04 0.02 0 0.3 0.4 0.5 0 SOURCE−TO−DRAIN VOLTAGE (VOLTS) SD Figure 7. Diode Forward Voltage vs. Current NID5001N TYPICAL PERFORMANCE CURVES 100 V ...

Page 5

... G 0.13 (0.005) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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