NID5001NT4G ON Semiconductor, NID5001NT4G Datasheet - Page 4
![SMART MOSFET, N, 42V, 64W, D-PAK](/photos/19/8/190892/ge3dpak05-40_sml.jpg)
NID5001NT4G
Manufacturer Part Number
NID5001NT4G
Description
SMART MOSFET, N, 42V, 64W, D-PAK
Manufacturer
ON Semiconductor
Datasheet
1.NID5001NT4G.pdf
(5 pages)
Specifications of NID5001NT4G
Transistor Polarity
N Channel
Continuous Drain Current Id
33A
Drain Source Voltage Vds
42V
On Resistance Rds(on)
23mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
14VDC
Operating Temperature
RoHS Compliant
Threshold Voltage Vgs Typ
1.8V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.023 Ohms
Drain-source Breakdown Voltage
42 V
Gate-source Breakdown Voltage
+/- 14 V
Continuous Drain Current
33 A
Power Dissipation
64 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
DPAK
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NID5001NT4G
Manufacturer:
ON
Quantity:
2 500
Part Number:
NID5001NT4G
Manufacturer:
ON/安森美
Quantity:
20 000
0.14
0.12
0.08
0.06
0.04
0.02
0.1
0
0.3
Figure 7. Diode Forward Voltage vs. Current
V
T
V
J
GS
SD
= 25°C
0.4
= 0 V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
0.5
0.6
0.7
TYPICAL PERFORMANCE CURVES
0.8
http://onsemi.com
NID5001N
0.9
4
0.01
100
1.0
0.1
10
0.1
V
SINGLE PULSE
T
GS
C
Figure 8. Maximum Rated Forward Biased
= 25°C
= 5 V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
Safe Operating Area
1.0
LIMIT
dc
Based upon a T
10 ms
1 ms
J
10
= 100°C, Steady State.
100 ms
100