NID5001NT4G ON Semiconductor, NID5001NT4G Datasheet - Page 3
![SMART MOSFET, N, 42V, 64W, D-PAK](/photos/19/8/190892/ge3dpak05-40_sml.jpg)
NID5001NT4G
Manufacturer Part Number
NID5001NT4G
Description
SMART MOSFET, N, 42V, 64W, D-PAK
Manufacturer
ON Semiconductor
Datasheet
1.NID5001NT4G.pdf
(5 pages)
Specifications of NID5001NT4G
Transistor Polarity
N Channel
Continuous Drain Current Id
33A
Drain Source Voltage Vds
42V
On Resistance Rds(on)
23mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
14VDC
Operating Temperature
RoHS Compliant
Threshold Voltage Vgs Typ
1.8V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.023 Ohms
Drain-source Breakdown Voltage
42 V
Gate-source Breakdown Voltage
+/- 14 V
Continuous Drain Current
33 A
Power Dissipation
64 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
DPAK
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NID5001NT4G
Manufacturer:
ON
Quantity:
2 500
Part Number:
NID5001NT4G
Manufacturer:
ON/安森美
Quantity:
20 000
0.15
0.05
28
24
20
16
12
0.2
0.1
8
4
0
0
1.6
1.4
1.2
0.8
0.6
0
2
Figure 3. On−Resistance vs. Gate−to−Source
1
−50
V
GS
V
V
0.5
GS
DS
= 10 V to 4.2 V
Figure 1. On−Region Characteristics
3
I
V
D
, GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
= 5 A
−25
= 10 V
1
T
4
J
, JUNCTION TEMPERATURE (°C)
1.5
5
0
Voltage
Temperature
4 V
2
6
25
2.5
7
3.4 V
3.2 V
3.0 V
2.8 V
2.6 V
3.8 V
3.6 V
TYPICAL PERFORMANCE CURVES
50
3
8
T
I
T
D
J
J
= 25°C
= 5 A
= 25°C
3.5
75
9
http://onsemi.com
NID5001N
10
4
100
3
100000
10000
0.035
0.025
0.015
1000
0.03
0.02
100
28
24
20
16
12
8
4
0
10
2
Figure 4. On−Resistance vs. Drain Current and
1
V
V
T
GS
Figure 6. Drain−to−Source Leakage Current
DS
J
= 25°C
V
V
= 0 V
3
15
≥ 10 V
DS
GS
Figure 2. Transfer Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I
D,
4
T
DRAIN CURRENT (AMPS)
20
J
= 150°C
2
Gate Voltage
5
vs. Voltage
V
25
V
T
GS
GS
J
= 100°C
25°C
= 10 V
6
= 5 V
T
30
C
= −55°C
100°C
7
3
35
8
40
9
10
45
4