NID5001NT4G ON Semiconductor, NID5001NT4G Datasheet - Page 3

• Manufacturer Part Number: NID5001NT4G
• Description: SMART MOSFET, N, 42V, 64W, D-PAK
• Manufacturer: ON Semiconductor

Specifications of NID5001NT4G

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 33A
• Drain Source Voltage Vds: 42V
• On Resistance Rds(on): 23mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 14VDC
• Operating Temperature: RoHS Compliant
• Threshold Voltage Vgs Typ: 1.8V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.023 Ohms
• Drain-source Breakdown Voltage: 42 V
• Gate-source Breakdown Voltage: +/- 14 V
• Continuous Drain Current: 33 A
• Power Dissipation: 64 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

0.15
0.05
28
24
20
16
12
0.2
0.1
8
4
0
0
1.6
1.4
1.2
0.8
0.6
0
2
Figure 3. On−Resistance vs. Gate−to−Source
1
−50
V
GS
V
V
0.5
GS
DS
= 10 V to 4.2 V
Figure 1. On−Region Characteristics
3
I
V
D
, GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
= 5 A
−25
= 10 V
1
T
4
J
, JUNCTION TEMPERATURE (°C)
1.5
5
0
Voltage
Temperature
4 V
2
6
25
2.5
7
3.4 V
3.2 V
3.0 V
2.8 V
2.6 V
3.8 V
3.6 V
TYPICAL PERFORMANCE CURVES
50
3
8
T
I
T
D
J
J
= 25°C
= 5 A
= 25°C
3.5
75
9
http://onsemi.com
NID5001N
10
4
100
3
100000
10000
0.035
0.025
0.015
1000
0.03
0.02
100
28
24
20
16
12
8
4
0
10
2
Figure 4. On−Resistance vs. Drain Current and
1
V
V
T
GS
Figure 6. Drain−to−Source Leakage Current
DS
J
= 25°C
V
V
= 0 V
3
15
≥ 10 V
DS
GS
Figure 2. Transfer Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I
D,
4
T
DRAIN CURRENT (AMPS)
20
J
= 150°C
2
Gate Voltage
5
vs. Voltage
V
25
V
T
GS
GS
J
= 100°C
25°C
= 10 V
6
= 5 V
T
30
C
= −55°C
100°C
7
3
35
8
40
9
10
45
4