NID5001NT4G ON Semiconductor, NID5001NT4G Datasheet - Page 2
![SMART MOSFET, N, 42V, 64W, D-PAK](/photos/19/8/190892/ge3dpak05-40_sml.jpg)
NID5001NT4G
Manufacturer Part Number
NID5001NT4G
Description
SMART MOSFET, N, 42V, 64W, D-PAK
Manufacturer
ON Semiconductor
Datasheet
1.NID5001NT4G.pdf
(5 pages)
Specifications of NID5001NT4G
Transistor Polarity
N Channel
Continuous Drain Current Id
33A
Drain Source Voltage Vds
42V
On Resistance Rds(on)
23mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
14VDC
Operating Temperature
RoHS Compliant
Threshold Voltage Vgs Typ
1.8V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.023 Ohms
Drain-source Breakdown Voltage
42 V
Gate-source Breakdown Voltage
+/- 14 V
Continuous Drain Current
33 A
Power Dissipation
64 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
DPAK
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NID5001NT4G
Manufacturer:
ON
Quantity:
2 500
Part Number:
NID5001NT4G
Manufacturer:
ON/安森美
Quantity:
20 000
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
MOSFET ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SWITCHING CHARACTERISTICS
SELF PROTECTION CHARACTERISTICS (T
ESD ELECTRICAL CHARACTERISTICS (T
Drain−to−Source Clamped Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Input Current
Gate Threshold Voltage
Static Drain−to−Source On−Resistance (Note 3)
Static Drain−to−Source On−Resistance (Note 3)
Source−Drain Forward On Voltage
Turn−on Time
Turn−off Time
Turn−on Time
Turn−off Time
Slew Rate On
Slew−Rate Off
Current Limit
Temperature Limit (Turn−off)
Temperature Limit
Temperature Limit (Turn−off)
Temperature Limit
Electro−Static Discharge Capability
(V
(V
(V
(V
(V
(V
Threshold Temperature Coefficient
(V
(V
(V
(V
(I
(Circuit Reset)
(Circuit Reset)
Human Body Model (HBM)
Machine Model (MM)
S
GS
GS
DS
DS
GS
DS
GS
GS
GS
GS
= 5 A, V
= 0 Vdc, I
= 0 Vdc, I
= 32 Vdc, V
= 32 Vdc, V
= 5.0 Vdc, V
= V
= 10 Vdc, I
= 10 Vdc, I
= 5.0 Vdc, I
= 5.0 Vdc, I
GS
GS
, I
D
= 0 V)
D
D
= 1.2 mAdc)
D
D
D
D
= 250 mAdc)
= 250 mAdc, T
GS
GS
DS
= 5.0 Adc, T
= 5.0 Adc, T
= 5.0 Adc, T
= 5.0 Adc, T
= 0 Vdc)
= 0 Vdc, T
= 0 Vdc)
Characteristic
J
J
J
J
J
J
@ 25°C)
@ 150°C)
= 150°C)
= 150°C)
@ 25°C)
@ 150°C)
V
V
DS
DS
= 10 V (V
= 10 V (V
J
V
V
I
I
D
D
V
V
= 25°C unless otherwise noted)
GS
GS
J
in
in
= 1.0 A
= 1.0 A
= 25°C unless otherwise noted)
= 0 to 10 V, V
= 10 to 0 V, V
= 5.0 V
= 10 V
(V
(V
V
V
V
V
(T
GS
R
R
GS
GS
GS
GS
GS
GS
GS
dc
dc
L
L
J
dc
= 5.0 Vdc, T
, Ext R
, Ext R
= 4.7 W,
= 4.7 W,
= 5.0 Vdc)
= 10 Vdc, T
= 5.0 Vdc
= 5.0 Vdc
= 25°C unless otherwise noted)
dc
= 10 Vdc)
= 10 Vdc
= 10 Vdc
http://onsemi.com
, V
, V
DD
DD
NID5001N
DD
DD
G
G
= 25 V
= 25 V
= 2.5 W
= 2.5 W
= 12 V
= 12 V
2
J
J
= 150°C)
= 150°C)
dc,
dc
−dV
dV
V
Symbol
T
T
R
R
T
T
V
(BR)DSS
I
LIM(off)
LIM(on)
LIM(off)
LIM(on)
I
GSSF
T
T
T
T
ESD
DS(on)
DS(on)
V
DS
GS(th)
I
DSS
DS
LIM
(on)
(off)
(on)
(off)
SD
/dt
/dt
off
on
4000
Min
150
135
150
135
400
1.0
42
42
21
12
29
13
0.80
0.35
Typ
175
160
165
150
1.5
6.5
1.8
5.0
0.5
46
44
50
23
43
28
50
32
68
86
30
19
41
24
11
Max
100
200
185
185
170
5.0
2.0
1.1
50
50
29
55
34
60
40
75
15
95
36
30
49
31
−mV/°C
mAdc
mAdc
V/ms
V/ms
Unit
Vdc
Vdc
Adc
mW
mW
°C
°C
°C
°C
ms
V
V