NID5001NT4G ON Semiconductor, NID5001NT4G Datasheet - Page 2

• Manufacturer Part Number: NID5001NT4G
• Description: SMART MOSFET, N, 42V, 64W, D-PAK
• Manufacturer: ON Semiconductor

Specifications of NID5001NT4G

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 33A
• Drain Source Voltage Vds: 42V
• On Resistance Rds(on): 23mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 14VDC
• Operating Temperature: RoHS Compliant
• Threshold Voltage Vgs Typ: 1.8V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.023 Ohms
• Drain-source Breakdown Voltage: 42 V
• Gate-source Breakdown Voltage: +/- 14 V
• Continuous Drain Current: 33 A
• Power Dissipation: 64 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
MOSFET ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SWITCHING CHARACTERISTICS
SELF PROTECTION CHARACTERISTICS (T
ESD ELECTRICAL CHARACTERISTICS (T
Drain−to−Source Clamped Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Input Current
Gate Threshold Voltage
Static Drain−to−Source On−Resistance (Note 3)
Static Drain−to−Source On−Resistance (Note 3)
Source−Drain Forward On Voltage
Turn−on Time
Turn−off Time
Turn−on Time
Turn−off Time
Slew Rate On
Slew−Rate Off
Current Limit
Temperature Limit (Turn−off)
Temperature Limit
Temperature Limit (Turn−off)
Temperature Limit
Electro−Static Discharge Capability
(V
(V
(V
(V
(V
(V
Threshold Temperature Coefficient
(V
(V
(V
(V
(I
(Circuit Reset)
(Circuit Reset)
Human Body Model (HBM)
Machine Model (MM)
S
GS
GS
DS
DS
GS
DS
GS
GS
GS
GS
= 5 A, V
= 0 Vdc, I
= 0 Vdc, I
= 32 Vdc, V
= 32 Vdc, V
= 5.0 Vdc, V
= V
= 10 Vdc, I
= 10 Vdc, I
= 5.0 Vdc, I
= 5.0 Vdc, I
GS
GS
, I
D
= 0 V)
D
D
= 1.2 mAdc)
D
D
D
D
= 250 mAdc)
= 250 mAdc, T
GS
GS
DS
= 5.0 Adc, T
= 5.0 Adc, T
= 5.0 Adc, T
= 5.0 Adc, T
= 0 Vdc)
= 0 Vdc, T
= 0 Vdc)
Characteristic
J
J
J
J
J
J
@ 25°C)
@ 150°C)
= 150°C)
= 150°C)
@ 25°C)
@ 150°C)
V
V
DS
DS
= 10 V (V
= 10 V (V
J
V
V
I
I
D
D
V
V
= 25°C unless otherwise noted)
GS
GS
J
in
in
= 1.0 A
= 1.0 A
= 25°C unless otherwise noted)
= 0 to 10 V, V
= 10 to 0 V, V
= 5.0 V
= 10 V
(V
(V
V
V
V
V
(T
GS
R
R
GS
GS
GS
GS
GS
GS
GS
dc
dc
L
L
J
dc
= 5.0 Vdc, T
, Ext R
, Ext R
= 4.7 W,
= 4.7 W,
= 5.0 Vdc)
= 10 Vdc, T
= 5.0 Vdc
= 5.0 Vdc
= 25°C unless otherwise noted)
dc
= 10 Vdc)
= 10 Vdc
= 10 Vdc
http://onsemi.com
, V
, V
DD
DD
NID5001N
DD
DD
G
G
= 25 V
= 25 V
= 2.5 W
= 2.5 W
= 12 V
= 12 V
2
J
J
= 150°C)
= 150°C)
dc,
dc
−dV
dV
V
Symbol
T
T
R
R
T
T
V
(BR)DSS
I
LIM(off)
LIM(on)
LIM(off)
LIM(on)
I
GSSF
T
T
T
T
ESD
DS(on)
DS(on)
V
DS
GS(th)
I
DSS
DS
LIM
(on)
(off)
(on)
(off)
SD
/dt
/dt
off
on
4000
Min
150
135
150
135
400
1.0
42
42
21
12
29
13
0.80
0.35
Typ
175
160
165
150
1.5
6.5
1.8
5.0
0.5
46
44
50
23
43
28
50
32
68
86
30
19
41
24
11
Max
100
200
185
185
170
5.0
2.0
1.1
50
50
29
55
34
60
40
75
15
95
36
30
49
31
−mV/°C
mAdc
mAdc
V/ms
V/ms
Unit
Vdc
Vdc
Adc
mW
mW
°C
°C
°C
°C
ms
V
V