PSMN011-80YS NXP Semiconductors, PSMN011-80YS Datasheet - Page 6
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PSMN011-80YS
Manufacturer Part Number
PSMN011-80YS
Description
MOSFET,N CH,80V,67A,LFPAK
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN011-80YS115.pdf
(15 pages)
Specifications of PSMN011-80YS
Transistor Polarity
N Channel
Drain Source Voltage Vds
80V
On Resistance Rds(on)
8mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Transistor Case
RoHS Compliant
Transistor Case Style
SOT-669
Rohs Compliant
Yes
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PSMN011-80YS
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
6. Characteristics
Table 6.
PSMN011-80YS
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
(BR)DSS
GS(th)
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
internal gate resistance (AC)
total gate charge
gate-source charge
pre-threshold gate-source
charge
post-threshold gate-source
charge
gate-drain charge
gate-source plateau voltage
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 28 October 2010
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
V
see
f = 1 MHz
I
I
see
I
see
I
see
I
see
V
T
V
R
D
D
D
D
D
D
D
D
D
D
j
DS
DS
GS
GS
GS
GS
GS
DS
DS
G(ext)
= 25 °C; see
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 0 A; V
= 25 A; V
= 25 A; V
= 25 A; V
= 25 A; V
Figure 10
Figure 10
Figure
Figure 12
Figure 12
Figure
Figure
Figure 14
Figure
Figure 15
= 80 V; V
= 80 V; V
= -20 V; V
= 20 V; V
= 10 V; I
= 10 V; I
= 10 V; I
= 40 V; V
= 40 V; R
= 4.7 Ω
DS
N-channel LFPAK 80 V 11 mΩ standard level MOSFET
11; see
12; see
14; see
14; see
DS
DS
DS
DS
DS
DS
DS
D
D
D
= 0 V; V
GS
GS
GS
DS
L
GS
GS
DS
= 40 V; see
= 25 A; T
= 25 A; T
= 25 A; T
= 40 V; V
= 40 V; V
= 40 V; V
= V
= V
= V
Figure 16
= 1.6 Ω; V
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
Figure 10
Figure 13
Figure 15
Figure 15
; T
; T
; T
GS
j
j
j
j
j
j
GS
GS
GS
= 10 V
j
j
j
= 175 °C;
= -55 °C;
= 25 °C;
= 175 °C;
= 100 °C;
= 25 °C;
j
j
j
= 25 °C
= 125 °C
= 25 °C
GS
= -55 °C
= 25 °C
= 25 °C
Figure
= 10 V;
= 10 V;
= 10 V;
= 10 V;
14;
PSMN011-80YS
Min
73
80
1
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
3
0.02
-
-
-
19
-
8.6
0.7
38
45
13
8
5
11
4.9
2800
270
146
23
20
40
12
© NXP B.V. 2010. All rights reserved.
-
Max
-
-
-
4.6
4
1
100
100
100
26
18
11
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
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