PSMN013-30LL NXP Semiconductors, PSMN013-30LL Datasheet - Page 5

• Manufacturer Part Number: PSMN013-30LL
• Description: MOSFET,N CH,30V,21A,QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-30LL

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 11mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: QFN
• Rohs Compliant: Yes

NXP Semiconductors
5. Thermal characteristics
Table 5.
[1]
PSMN013-30LL
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
R
temperature. In practice R
th(j-a)
10
10
10
-1
-2
1
10
values
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
is guaranteed by design and assumes that the device is mounted on a 40mm x 40mm x 70µm copper pad at 20°C ambient
-6
Thermal characteristics
0.02
δ = 0.5
0.2
0.1
0.05
single shot
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
10
th(j-a)
-5
will be determined by the customer’s PCB characteristics
Conditions
see
All information provided in this document is subject to legal disclaimers.
10
-4
Figure 4
Rev. 04 — 7 July 2010
10
-3
N-channel QFN3333 30 V 13 mΩ logic level MOSFET
10
-2
[1]
PSMN013-30LL
Min
-
-
10
P
-1
t
Typ
2.8
56
p
t
p
T
(s)
© NXP B.V. 2010. All rights reserved.
003aae186
δ =
Max
6.6
60
t
T
p
t
1
Unit
K/W
K/W
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