PSMN013-100ES,127 NXP Semiconductors, PSMN013-100ES,127 Datasheet
PSMN013-100ES,127
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PSMN013-100ES,127 Summary of contents
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... PSMN013-100ES N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK Rev. 02 — 19 February 2010 1. Product profile 1.1 General description Standard level N-channel enhancement MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...
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... S source mb D mounting base; connected to drain 3. Ordering information Table 3. Ordering information Type number Package Name PSMN013-100ES I2PAK PSMN013-100ES_2 Objective data sheet N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK Quick reference …continued Conditions drain-source on-state resistance T = 100 °C; see ...
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... j(init Ω unclamped 003aac512 120 P der (%) 80 40 150 200 T (°C) mb Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 February 2010 PSMN013-100ES Min - - - -55 - ≤ 100 V; - sup 100 150 Normalized total power dissipation as a function of mounting base temperature © ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN013-100ES_2 Objective data sheet N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK Conditions see Figure 3 vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 February 2010 PSMN013-100ES Min Typ Max - 0.5 0 003a a d575 t p δ ...
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... DS GS see Figure 13 and see Figure see Figure 14 and see Figure 14 and MHz °C; see Figure 15 j All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 February 2010 PSMN013-100ES Min Typ Max Unit 100 - - 4 100 µA - 0.06 2 µ 100 100 38.9 mΩ ...
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... V DS 003a a d577 5000 (pF) 4000 5.5 3000 5 2000 4 1000 (V) DS Fig 5. All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 February 2010 PSMN013-100ES Min Typ - 109 Input and reverse transfer capacitances as a function of gate-source voltage; typical values Max Unit ...
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... V (V) GS Fig 7. 003a a d582 V GS(th) (V) 25 ° (V) GS Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 February 2010 PSMN013-100ES 120 Forward transconductance as a function of drain current; typical values 5 4 max 3 typ 2 min 1 0 − 120 ...
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... N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK 03aa35 typ max (V) GS Fig 11. Normalized drain-source on-state resistance 003aad578 (A) D Fig 13. Gate-source voltage as a function of gate All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 February 2010 PSMN013-100ES 3.2 a 2.4 1.6 0 factor as a function of junction temperature ( 50V DS 6 ...
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... N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK Q GD 003aaa508 Fig 15. Input, output and reverse transfer capacitances 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 February 2010 PSMN013-100ES (pF −2 − function of drain-source voltage; typical values 003a a d584 25 °C 0.9 1.2 V ...
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... max 0.7 1.6 10.3 11 2.54 0.4 1.2 9.7 REFERENCES JEDEC JEITA TO-262 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 February 2010 PSMN013-100ES mounting base 15.0 3.30 2.6 13.5 2.79 2.2 EUROPEAN PROJECTION SOT226 ISSUE DATE 06-02-14 09-08-25 © ...
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... N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK Data sheet status Change notice Objective data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 February 2010 PSMN013-100ES Supersedes PSMN013-100ES_1 - © NXP B.V. 2010. All rights reserved ...
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... All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 February 2010 PSMN013-100ES © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 February 2010 PSMN013-100ES Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 19 February 2010 Document identifier: PSMN013-100ES_2 ...