PSMN013-100XS,127 NXP Semiconductors, PSMN013-100XS,127 Datasheet

PSMN013-100XS,127

Manufacturer Part Number

PSMN013-100XS,127

Description

MOSFET N-ch 100V 13mA MOSFET

Manufacturer

NXP Semiconductors

Datasheet

1.PSMN013-100XS127.pdf (15 pages)

Specifications of PSMN013-100XS,127

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

24.9 A

Resistance Drain-source Rds (on)

10.8 mOhms

Configuration

Single

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Package / Case

TO-220F

Minimum Operating Temperature

- 55 C

Power Dissipation

48.4 W

Factory Pack Quantity

Current page: 1 of 15
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1. Product profile

Table 1.

Symbol

Static characteristics

Dynamic characteristics

Avalanche ruggedness

tot

DS(AL)S

DSon

G(tot)

Quick reference data

Parameter

drain-source voltage

drain current

total power dissipation

drain-source on-state

resistance

gate-drain charge

total gate charge

non-repetitive

drain-source

avalanche energy

1.1 General description

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C.

This product is designed and qualified for use in a wide range of industrial,

communications and domestic equipment.



PSMN013-100XS

N-channel 100V 13 mΩ standard level MOSFET in TO220F

(SOT186A)

Rev. 2 — 6 March 2012

High efficiency due to low switching

and conduction losses

AC-to-DC power supply equipment

Motor control

Conditions

see

sup

≥ 25 °C; T

Figure

Figure 3

= 25 °C; V

= 25 °C; see

= 10 V; I

= 10 V; T

≤ 100 V; unclamped; R

12; see

14; see

≤ 175 °C

j(init)

= 10 A; T

= 10 A; V

Figure 2

= 10 V; see

= 25 °C; I

Figure 13

Figure 15

= 25 °C;

= 50 V;

= 35.2 A;

Figure 1

= 50 Ω;



Isolated package

Suitable for standard level gate drive

Server power supplies

Synchronous rectification

Min

Product data sheet

Typ

10.8

17.5

57.5

Max

100

35.2

48.4

13.9

180

Unit

mΩ

Related parts for PSMN013-100XS,127

PSMN013-100XS,127 Summary of contents

Page 1

... PSMN013-100XS N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A) Rev. 2 — 6 March 2012 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...

Page 2

... GS mb ≤ 10 µs; T pulsed ° see Figure °C; see Figure 2 mb All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 March 2012 PSMN013-100XS Graphic symbol mbb076 Version SOT186A Min Max - 100 = 20 kΩ - 100 GS ...

Page 3

... Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 March 2012 PSMN013-100XS Min - = 25 ° 35 Ω 100 150 T © NXP B.V. 2012. All rights reserved. ...

Page 4

... Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 March 2012 PSMN013-100XS 003aag602 (1) ( (ms) AL =10 μ 100 μ 100 (V) DS © NXP B.V. 2012. All rights reserved. ...

Page 5

... Figure 5 vertical in free air - Conditions MHz 50 Hz ≤ f ≤ 60 Hz; RH ≤ sinusoidal waveform; clean and dust free All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 March 2012 PSMN013-100XS Min Typ - 2. 003aag605 P δ ...

Page 6

... °C; see Figure 16; see Figure Ω 4.7 Ω °C G(ext) j All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 March 2012 PSMN013-100XS Min Typ Max Unit 100 - - ...

Page 7

... DSon (m Ω ) 5.0 4.8 4.6 4.4 4 (V) DS Fig 7. 003aag608 ( (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 March 2012 PSMN013-100XS Min Typ - 0 109 Drain-source on-state resistance as a function of gate-source voltage; typical values 80 ...

Page 8

... Fig 11. Sub-threshold drain current as a function of 003aag611 a 5.5 6 100 120 I (A) D Fig 13. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 March 2012 PSMN013-100XS −1 min typ −2 −3 −4 −5 − gate-source voltage 3 2 ...

Page 9

... Fig 15. Gate-source voltage as a function of gate 003aag613 (pF) C iss C oss C rss (V) DS Fig 17. Input and reverse transfer capacitances as a All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 March 2012 PSMN013-100XS (V) 80V 50V V = 20V charge ...

Page 10

... N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A) 120 I S (A) 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 March 2012 PSMN013-100XS 003aag614 = 25 ° 0.9 1.2 V (V) SD © NXP B.V. 2012. All rights reserved ...

Page 11

... scale 2.7 0.7 15.8 6.5 10.3 5.08 2.54 1.7 0.4 15.2 6.3 9.7 REFERENCES JEDEC JEITA 3-lead TO-220F All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 March 2012 PSMN013-100XS mounting base ( max. 0.6 14.4 3.30 2.6 3.2 3 0.4 13.5 2.79 2.3 3.0 EUROPEAN PROJECTION SOT186A ...

Page 12

... NXP Semiconductors 9. Revision history Table 8. Revision history Document ID Release date PSMN013-100XS v.2 20120306 • Modifications: Status changed from preliminary to product. • Various changes to content. PSMN013-100XS v.1 20111213 PSMN013-100XS Product data sheet N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A) Data sheet status ...

Page 13

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 March 2012 PSMN013-100XS © NXP B.V. 2012. All rights reserved ...

Page 14

... Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMediaand UCODE— are trademarks of NXP B.V. HD RadioandHD Radiologo — are trademarks of iBiquity Digital Corporation. to:salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 March 2012 PSMN013-100XS © NXP B.V. 2012. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PSMN013-100XS All rights reserved. Date of release: 6 March 2012 Document identifier: PSMN013-100XS ...

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