PSMN013-100XS,127 NXP Semiconductors, PSMN013-100XS,127 Datasheet - Page 2

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PSMN013-100XS,127

Manufacturer Part Number
PSMN013-100XS,127
Description
MOSFET N-ch 100V 13mA MOSFET
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN013-100XS,127

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
24.9 A
Resistance Drain-source Rds (on)
10.8 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220F
Minimum Operating Temperature
- 55 C
Power Dissipation
48.4 W
Factory Pack Quantity
50
NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN013-100XS
Product data sheet
Pin
1
2
3
mb
Type number
PSMN013-100XS
Symbol
V
V
V
I
I
P
T
T
T
D
DM
stg
j
sld(M)
DS
DGR
GS
tot
Symbol Description
G
D
S
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
gate
drain
source
mounting base; isolated
TO-220F
Package
Name
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A)
All information provided in this document is subject to legal disclaimers.
Conditions
T
T
V
V
pulsed; t
see
T
Rev. 2 — 6 March 2012
j
j
mb
GS
GS
Simplified outline
≥ 25 °C; T
≥ 25 °C; T
Figure 4
= 25 °C; see
= 10 V; T
= 10 V; T
SOT186A (TO-220F)
p
≤ 10 µs; T
j
j
≤ 175 °C
≤ 175 °C; R
mb
mb
1
mb
2
= 25 °C; see
= 100 °C; see
Figure 2
3
mb
= 25 °C;
GS
= 20 kΩ
Figure 1
Figure 1
Graphic symbol
PSMN013-100XS
mbb076
G
Min
-
-
-20
-
-
-
-
-55
-55
-
© NXP B.V. 2012. All rights reserved.
D
S
Version
SOT186A
Max
100
100
20
35.2
24.9
141
48.4
175
175
260
°C
°C
°C
Unit
V
V
V
A
A
A
W
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