PSMN013-100XS,127 NXP Semiconductors, PSMN013-100XS,127 Datasheet - Page 4

• Manufacturer Part Number: PSMN013-100XS,127
• Description: MOSFET N-ch 100V 13mA MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-100XS,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 24.9 A
• Resistance Drain-source Rds (on): 10.8 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220F
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 48.4 W
• Factory Pack Quantity: 50

NXP Semiconductors
PSMN013-100XS
Product data sheet
Fig 3.
Fig 4.
(A)
I
D
10
10
10
10
-1
3
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1
10
Single pulse avalanche rating; avalanche current as a function of avalanche time
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
-1
Limit R
1
(A)
I
AL
10
10
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-1
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1
10
DSon
N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A)
All information provided in this document is subject to legal disclaimers.
-3
= V
DS
/ I
10
D
Rev. 2 — 6 March 2012
-2
10
10
-1
DC
1
(1)
(2)
003aag602
t
AL
(ms)
10
PSMN013-100XS
10
2
t
100 μ s
1 ms
10 ms
100 ms
p
=10 μ s
V
DS
(V)
© NXP B.V. 2012. All rights reserved.
003aag603
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