PSMN013-100XS,127 NXP Semiconductors, PSMN013-100XS,127 Datasheet - Page 3

• Manufacturer Part Number: PSMN013-100XS,127
• Description: MOSFET N-ch 100V 13mA MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-100XS,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 24.9 A
• Resistance Drain-source Rds (on): 10.8 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220F
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 48.4 W
• Factory Pack Quantity: 50

NXP Semiconductors
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN013-100XS
Product data sheet
Symbol
Source-drain diode
I
I
Avalanche ruggedness
E
S
SM
Fig 1.
DS(AL)S
(A)
I
D
40
30
20
10
0
mounting base temperature
Continuous drain current as a function of
0
Limiting values
Parameter
source current
peak source current
non-repetitive drain-source
avalanche energy
50
…continued
100
150
N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A)
All information provided in this document is subject to legal disclaimers.
T
003aag601
mb
( ° C)
200
Conditions
T
pulsed; t
V
V
see
Rev. 2 — 6 March 2012
mb
GS
sup
Figure 3
= 25 °C
= 10 V; T
≤ 100 V; unclamped; R
p
≤ 10 µs; T
Fig 2.
j(init)
P
(%)
= 25 °C; I
der
120
80
40
mb
0
function of mounting base temperature
Normalized total power dissipation as a
0
= 25 °C
D
GS
= 35.2 A;
= 50 Ω;
50
PSMN013-100XS
100
Min
-
-
-
150
© NXP B.V. 2012. All rights reserved.
T
mb
Max
40.3
141
180
03aa16
(°C)
200
Unit
A
A
mJ
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