PSMN013-100BS NXP Semiconductors, PSMN013-100BS Datasheet

Standard level N-channel MOSFET in D2PAK package qualified to 175C

PSMN013-100BS

Manufacturer Part Number
PSMN013-100BS
Description
Standard level N-channel MOSFET in D2PAK package qualified to 175C
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
Table 1.
[1]
Symbol
V
I
P
T
Static characteristics
R
Dynamic characteristics
Q
Q
Avalanche ruggedness
E
D
j
DS
tot
DS(AL)S
DSon
GD
G(tot)
Continuous current is limited by package
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
gate-drain charge
total gate charge
non-repetitive drain-source
avalanche energy
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
PSMN013-100BS
N-channel 100V 13.9 mΩ standard level MOSFET in D2PAK
Rev. 3 — 1 March 2012
High efficiency due to low switching
and conduction losses
DC-to-DC converters
Load switching
Conditions
T
T
T
V
see
V
see
V
see
V
see
V
V
j
mb
mb
GS
GS
GS
GS
GS
sup
≥ 25 °C; T
Figure
Figure 13
Figure
Figure
= 25 °C; V
= 25 °C; see
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; T
≤ 100 V; unclamped; R
12; see
15; see
14; see
j
D
D
D
D
≤ 175 °C
j(init)
GS
= 15 A; T
= 15 A; T
= 25 A; V
= 25 A; V
Figure 2
= 10 V; see
= 25 °C; I
Figure 13
Figure 14
Figure 15
j
j
DS
DS
= 100 °C;
= 25 °C;
= 50 V;
= 50 V;
D
GS
= 68 A;
Figure 1
= 50 Ω
Suitable for standard level gate drive
Motor control
Server power supplies
[1]
Min
-
-
-
-55
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
19.4
10.8
17
59
-
175
Max
100
68
170
25
13.9
-
-
127
Unit
V
A
W
°C
mΩ
mΩ
nC
nC
mJ

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PSMN013-100BS Summary of contents

Page 1

... PSMN013-100BS N-channel 100V 13.9 mΩ standard level MOSFET in D2PAK Rev. 3 — 1 March 2012 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  ...

Page 2

... T pulsed ° ° j(init) ≤ 100 V; unclamped sup All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 March 2012 PSMN013-100BS Graphic symbol G mbb076 2 3 Min - = 20 kΩ - -20 [1] Figure 1 - [1] Figure 1 - ...

Page 3

... N-channel 100V 13.9 mΩ standard level MOSFET in D2PAK 003aac512 150 200 T (°C) mb Fig All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 March 2012 PSMN013-100BS 120 P der (%) 100 Normalized total power dissipation as a function of mounting base temperature =10 μ ...

Page 4

... Product data sheet N-channel 100V 13.9 mΩ standard level MOSFET in D2PAK Conditions see Figure 4 minimum footprint; mounted on a printed-circuit board - All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 March 2012 PSMN013-100BS Min Typ Max - 0.5 0 003a a d575 t p δ ...

Page 5

... MHz °C; see Figure Ω 4.7 Ω °C G(ext) j All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 March 2012 PSMN013-100BS Min Typ Max = -55 ° °C 100 - - 4.6 = 125 ° ...

Page 6

... V (V) DS Fig 6. 003a a d585 (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 March 2012 PSMN013-100BS Min Typ = 25 ° 109 Input and reverse transfer capacitances as a function of gate-source voltage; typical values ...

Page 7

... V (V) GS Fig 10. Gate-source threshold voltage as a function of 03aa35 typ max (V) GS Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 March 2012 PSMN013-100BS 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature 3 ...

Page 8

... N-channel 100V 13.9 mΩ standard level MOSFET in D2PAK 003aad578 (A) D Fig 14. Gate-source voltage as a function of gate (pF 003aaa508 Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 March 2012 PSMN013-100BS ( 50V charge ...

Page 9

... Product data sheet N-channel 100V 13.9 mΩ standard level MOSFET in D2PAK 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 March 2012 PSMN013-100BS 003a a d584 25 °C 0.9 1 © NXP B.V. 2012. All rights reserved ...

Page 10

... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 March 2012 PSMN013-100BS mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2012. All rights reserved. SOT404 ...

Page 11

... N-channel 100V 13.9 mΩ standard level MOSFET in D2PAK Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 March 2012 PSMN013-100BS Supersedes PSMN013-100BS v.2 PSMN013-100BS v.1 © NXP B.V. 2012. All rights reserved ...

Page 12

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 March 2012 PSMN013-100BS © NXP B.V. 2012. All rights reserved ...

Page 13

... Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMediaand UCODE— are trademarks of NXP B.V. HD RadioandHD Radiologo — are trademarks of iBiquity Digital Corporation. to:salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 March 2012 PSMN013-100BS © NXP B.V. 2012. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 1 March 2012 Document identifier: PSMN013-100BS ...

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