PSMN013-100BS NXP Semiconductors, PSMN013-100BS Datasheet - Page 7

• Manufacturer Part Number: PSMN013-100BS
• Description: Standard level N-channel MOSFET in D2PAK package qualified to 175C
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN013-100BS
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
(A)
I
(A)
10
10
10
10
10
10
D
I
100
D
80
60
40
20
−1
−2
−3
−4
−5
−6
0
function of gate-source voltage; typical values
gate-source voltage
Transfer characteristics: drain current as a
0
0
2
2
T
min
j
= 175 °C
typ
4
4
max
V
V
All information provided in this document is subject to legal disclaimers.
GS
003a a d582
25 °C
GS
(V)
(V)
03aa35
6
6
Rev. 3 — 1 March 2012
N-channel 100V 13.9 mΩ standard level MOSFET in D2PAK
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
3.2
2.4
1.6
0.8
5
4
3
2
1
0
0
−60
-60
junction temperature
factor as a function of junction temperature
0
0
PSMN013-100BS
60
60
max
min
typ
120
120
© NXP B.V. 2012. All rights reserved.
003aad774
003aad280
T
T
j
j
(°C)
(°C)
180
180
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