PSMN013-100BS NXP Semiconductors, PSMN013-100BS Datasheet - Page 2

• Manufacturer Part Number: PSMN013-100BS
• Description: Standard level N-channel MOSFET in D2PAK package qualified to 175C
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
[1]
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
PSMN013-100BS
Product data sheet
Pin
1
2
3
mb
Type number
PSMN013-100BS
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
It is not possible to make connection to pin 2.
Continuous current is limited by package
Symbol Description
G
D
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
gate
drain
source
mounting base; connected to drain
D2PAK
Package
Name
[1]
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Conditions
T
T
V
V
pulsed; t
T
T
pulsed; t
V
V
j
j
mb
mb
GS
GS
GS
sup
≥ 25 °C; T
≤ 175 °C; T
Rev. 3 — 1 March 2012
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 100 V; unclamped; R
N-channel 100V 13.9 mΩ standard level MOSFET in D2PAK
p
p
≤ 10 µs; T
≤ 10 µs; T
j
Simplified outline
≤ 175 °C
mb
mb
j(init)
j
≥ 25 °C; R
= 100 °C; see
= 25 °C; see
Figure 2
= 25 °C; I
SOT404 (D2PAK)
mb
mb
= 25 °C; see
= 25 °C
1
GS
mb
2
D
GS
= 20 kΩ
= 68 A;
3
Figure 1
= 50 Ω
Figure 1
Figure 3
PSMN013-100BS
Graphic symbol
[1]
[1]
[1]
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
mbb076
G
© NXP B.V. 2012. All rights reserved.
20
175
260
Version
SOT404
Max
100
100
47
68
272
170
175
68
272
127
D
S
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
mJ
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