PSMN013-100ES,127 NXP Semiconductors, PSMN013-100ES,127 Datasheet - Page 11
PSMN013-100ES,127
Manufacturer Part Number
PSMN013-100ES,127
Description
MOSFET N-CH 100V I2PAK
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN013-100ES127.pdf
(14 pages)
Specifications of PSMN013-100ES,127
Input Capacitance (ciss) @ Vds
3195pF @ 50V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13.9 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
68A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
59nC @ 10V
Power - Max
170W
Mounting Type
*
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
30 mOhms
Drain-source Breakdown Voltage
90 V
Continuous Drain Current
47 A
Power Dissipation
170 W
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NXP Semiconductors
8. Revision history
Table 7.
PSMN013-100ES_2
Objective data sheet
Document ID
PSMN013-100ES_2
Modifications:
PSMN013-100ES_1
Revision history
20100219
20090917
Release date
•
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Objective data sheet
Objective data sheet
Rev. 02 — 19 February 2010
N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK
Change notice
-
-
PSMN013-100ES
Supersedes
PSMN013-100ES_1
-
© NXP B.V. 2010. All rights reserved.
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