PSMN013-100ES,127 NXP Semiconductors, PSMN013-100ES,127 Datasheet - Page 9

• Manufacturer Part Number: PSMN013-100ES,127
• Description: MOSFET N-CH 100V I2PAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-100ES,127

• Input Capacitance (ciss) @ Vds: 3195pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.9 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 68A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Power - Max: 170W
• Mounting Type: *
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 30 mOhms
• Drain-source Breakdown Voltage: 90 V
• Continuous Drain Current: 47 A
• Power Dissipation: 170 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
PSMN013-100ES_2
Objective data sheet
Fig 14. Gate charge waveform definitions
Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
(A)
I
S
100
80
60
40
20
0
0
All information provided in this document is subject to legal disclaimers.
003aaa508
Rev. 02 — 19 February 2010
0.3
T
N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK
j
= 175 °C
0.6
Fig 15. Input, output and reverse transfer capacitances
(pF)
10
C
10
10
10
0.9
4
3
2
10
25 °C
as a function of drain-source voltage; typical
values
−2
003a a d584
V
S D
(V)
1.2
10
−1
PSMN013-100ES
1
10
© NXP B.V. 2010. All rights reserved.
V
003aad581
DS
C
C
C
oss
rss
iss
(V)
10
2
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