PSMN013-100ES,127 NXP Semiconductors, PSMN013-100ES,127 Datasheet - Page 7

• Manufacturer Part Number: PSMN013-100ES,127
• Description: MOSFET N-CH 100V I2PAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-100ES,127

• Input Capacitance (ciss) @ Vds: 3195pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.9 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 68A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Power - Max: 170W
• Mounting Type: *
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 30 mOhms
• Drain-source Breakdown Voltage: 90 V
• Continuous Drain Current: 47 A
• Power Dissipation: 170 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
PSMN013-100ES_2
Objective data sheet
Fig 6.
Fig 8.
R
(mΩ)
DS on
(A)
I
100
D
45
35
25
15
80
60
40
20
5
0
of gate-source voltage; typical values
function of gate-source voltage; typical values
Drain-source on-state resistance as a function
Transfer characteristics: drain current as a
4
0
8
2
T
j
= 175 °C
12
4
16
V
All information provided in this document is subject to legal disclaimers.
V
003a a d585
003a a d582
25 °C
GS
GS
(V)
(V)
Rev. 02 — 19 February 2010
20
6
N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK
Fig 7.
Fig 9.
V
GS(th)
(V)
(S )
g
150
120
fs
90
60
30
5
4
3
2
1
0
−60
0
drain current; typical values
junction temperature
Forward transconductance as a function of
Gate-source threshold voltage as a function of
0
30
0
PSMN013-100ES
60
60
max
min
typ
90
120
120
© NXP B.V. 2010. All rights reserved.
003a a d586
003aad280
T
I
j
D
(°C)
(A)
150
180
7 of 14