PSMN013-100ES,127 NXP Semiconductors, PSMN013-100ES,127 Datasheet - Page 8

• Manufacturer Part Number: PSMN013-100ES,127
• Description: MOSFET N-CH 100V I2PAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-100ES,127

• Input Capacitance (ciss) @ Vds: 3195pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.9 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 68A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Power - Max: 170W
• Mounting Type: *
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 30 mOhms
• Drain-source Breakdown Voltage: 90 V
• Continuous Drain Current: 47 A
• Power Dissipation: 170 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
PSMN013-100ES_2
Objective data sheet
Fig 10. Sub-threshold drain current as a function of
Fig 12. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
I
10
10
10
10
10
10
D
−1
−2
−3
−4
−5
−6
30
25
20
15
10
gate-source voltage
of drain current; typical values
0
0
V
GS
(V) = 4.5
20
5
6
2
min
40
10
typ
4
60
max
V
20
All information provided in this document is subject to legal disclaimers.
GS
003aad578
I
D
(V)
03aa35
(A)
Rev. 02 — 19 February 2010
80
6
N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK
Fig 11. Normalized drain-source on-state resistance
Fig 13. Gate-source voltage as a function of gate
a
V
(V)
GS
3.2
2.4
1.6
0.8
10
0
8
6
4
2
0
factor as a function of junction temperature
charge; typical values
-60
0
15
0
PSMN013-100ES
V
DS
60
30
= 50V
120
45
© NXP B.V. 2010. All rights reserved.
Q
003aad774
003a a d583
T
G
j
(°C)
(nC)
180
60
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