PSMN013-100ES,127 NXP Semiconductors, PSMN013-100ES,127 Datasheet - Page 4

• Manufacturer Part Number: PSMN013-100ES,127
• Description: MOSFET N-CH 100V I2PAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-100ES,127

• Input Capacitance (ciss) @ Vds: 3195pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.9 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 68A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Power - Max: 170W
• Mounting Type: *
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 30 mOhms
• Drain-source Breakdown Voltage: 90 V
• Continuous Drain Current: 47 A
• Power Dissipation: 170 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN013-100ES_2
Objective data sheet
Symbol
R
R
Fig 3.
th(j-mb)
th(j-a)
Z
(K/W)
th (j-mb)
10
10
10
10
-1
-2
-3
-4
1
1e -6
values
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
δ = 0.5
0.2
0.1
0.05
0.02
s ingle s hot
Thermal characteristics
Parameter
thermal resistance from
junction to mounting
base
thermal resistance from
junction to ambient
10
-5
Conditions
see
vertical in free air
10
-4
Figure 3
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 19 February 2010
10
N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK
-3
10
-2
10
-1
PSMN013-100ES
Min
-
-
P
1
Typ
0.5
60
t
p
T
© NXP B.V. 2010. All rights reserved.
t
p
(s )
003a a d575
δ =
Max
0.9
-
T
t
p
t
10
Unit
K/W
K/W
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